Auflistung nach Autor Nowotny, Ulrich

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ErscheinungsdatumTitelAutor(en)
199210-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data linksBerroth, Manfred; Hurm, Volker; Lang, Manfred; Ludwig, Manfred; Nowotny, Ulrich; Wang, Zhigong; Wennekers, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199111.6 Gbps 1:4 demultiplexer using double pulse doped quantum well GaAs/AlGaAs transistorsLang, Manfred; Nowotny, Ulrich; Berroth, Manfred
199215 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistorsWang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Gotzeina, Werner; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199216 x 16 bit parallel multiplier based on 6 K gate array with 0.3 μm AlGaAs/GaAs quantum well transistorsThiede, Andreas; Berroth, Manfred; Hurm, Volker; Nowotny, Ulrich; Seibel, Jörg; Gotzeina, W.; Sedler, Martin; Raynor, Brian; Köhler, Klaus; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Schneider, Joachim
199218 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTsWang, Zhigong; Nowotny, Ulrich; Berroth, Manfred; Bronner, Wolfgang; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
1993An 18-34-GHz dynamic frequency divider based on 0.2-μm AlGaAs/GaAs/AlGaAs quantum-well transistorsThiede, Andreas; Berroth, Manfred; Nowotny, Ulrich; Seibel, Jörg; Bosch, Roland; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
1991A 2.5 ns 8 x 8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistorsBerroth, Manfred; Hurm, Volker; Nowotny, Ulrich; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199120 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistorsNowotny, Ulrich; Lang, Manfred; Berroth, Manfred; Hurm, Volker; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199328-51 GHz dynamic frequency divider based on 0.15 μm T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETsThiede, Andreas; Tasker, Paul; Hülsmann, Axel; Köhler, Klaus; Bronner, Wolfgang; Schlechtweg, Michael; Berroth, Manfred; Braunstein, Jürgen; Nowotny, Ulrich
19947.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3-μm gate length quantum well HEMT'sWang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
19937.5 Gb/s monolithically integrated clock recovery using PLL and 0.3 μM gate length quantum well HEMTsWang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
1993Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- μm gate length quantum-well HEMT'sWang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Ludwig, Manfred; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim