Browsing by Author "Taniguchi, Takashi"

Filter results by typing the first few letters
Now showing 1 - 2 of 2
  • Thumbnail Image
    ItemOpen Access
    Magnetic domains and domain wall pinning in atomically thin CrBr3 revealed by nanoscale imaging
    (2021) Sun, Qi-Chao; Song, Tiancheng; Anderson, Eric; Brunner, Andreas; Förster, Johannes; Shalomayeva, Tetyana; Taniguchi, Takashi; Watanabe, Kenji; Gräfe, Joachim; Stöhr, Rainer; Xu, Xiaodong; Wrachtrup, Jörg
    The emergence of atomically thin van der Waals magnets provides a new platform for the studies of two-dimensional magnetism and its applications. However, the widely used measurement methods in recent studies cannot provide quantitative information of the magnetization nor achieve nanoscale spatial resolution. These capabilities are essential to explore the rich properties of magnetic domains and spin textures. Here, we employ cryogenic scanning magnetometry using a single-electron spin of a nitrogen-vacancy center in a diamond probe to unambiguously prove the existence of magnetic domains and study their dynamics in atomically thin CrBr3. By controlling the magnetic domain evolution as a function of magnetic field, we find that the pinning effect is a dominant coercivity mechanism and determine the magnetization of a CrBr3 bilayer to be about 26 Bohr magnetons per square nanometer. The high spatial resolution of this technique enables imaging of magnetic domains and allows to locate the sites of defects that pin the domain walls and nucleate the reverse domains. Our work highlights scanning nitrogen-vacancy center magnetometry as a quantitative probe to explore nanoscale features in two-dimensional magnets.
  • Thumbnail Image
    ItemOpen Access
    Observation of ultrafast interfacial Meitner-Auger energy transfer in a Van der Waals heterostructure
    (2023) Dong, Shuo; Beaulieu, Samuel; Selig, Malte; Rosenzweig, Philipp; Christiansen, Dominik; Pincelli, Tommaso; Dendzik, Maciej; Ziegler, Jonas D.; Maklar, Julian; Xian, R. Patrick; Neef, Alexander; Mohammed, Avaise; Schulz, Armin; Stadler, Mona; Jetter, Michael; Michler, Peter; Taniguchi, Takashi; Watanabe, Kenji; Takagi, Hidenori; Starke, Ulrich; Chernikov, Alexey; Wolf, Martin; Nakamura, Hiro; Knorr, Andreas; Rettig, Laurenz; Ernstorfer, Ralph
    Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe2/graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron injection from graphene to WSe2 is observed after photoexcitation of quasi-free hot carriers in the graphene layer, we establish an interfacial Meitner-Auger energy transfer process following the excitation of excitons in WSe2. By analysing the time-energy-momentum distributions of excited-state carriers with a rate-equation model, we distinguish these two types of interfacial dynamics and identify the ultrafast conversion of excitons in WSe2 to valence band transitions in graphene. Microscopic calculations find interfacial dipole-monopole coupling underlying the Meitner-Auger energy transfer to dominate over conventional Förster- and Dexter-type interactions, in agreement with the experimental observations. The energy transfer mechanism revealed here might enable new hot-carrier-based device concepts with van der Waals heterostructures.