03 Fakultät Chemie

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/4

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20212

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Institute: search.filters.UBSInstitut.Max-Planck-Institut für FestkörperforschungInstitute: search.filters.UBSInstitut.Fakultätsübergreifend / Sonstige EinrichtungAuthor: search.filters.author.Klauk, Hagen

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    A critical outlook for the pursuit of lower contact resistance in organic transistors
    (2021) Borchert, James W.; Weitz, R. Thomas; Ludwigs, Sabine; Klauk, Hagen
    To take full advantage of recent and anticipated improvements in the performance of organic semiconductors employed in organic transistors, the high contact resistance arising at the interfaces between the organic semiconductor and the source and drain contacts must be reduced significantly. To date, only a small portion of the accumulated research on organic thin‐film transistors (TFTs) has reported channel‐width‐normalized contact resistances below 100 Ωcm, well above what is regularly demonstrated in transistors based on inorganic semiconductors. A closer look at these cases and the relevant literature strongly suggests that the most significant factor leading to the lowest contact resistances in organic TFTs so far has been the control of the thin‐film morphology of the organic semiconductor. By contrast, approaches aimed at increasing the charge‐carrier density and/or reducing the intrinsic Schottky barrier height have so far played a relatively minor role in achieving the lowest contact resistances. Herein, the possible explanations for these observations are explored, including the prevalence of Fermi‐level pinning and the difficulties in forming optimized interfaces with organic semiconductors. An overview of the research on these topics is provided, and potential device‐engineering solutions are discussed based on recent advancements in the theoretical and experimental work on both organic and inorganic semiconductors.
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    Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
    (2021) Geiger, Michael; Hagel, Marion; Reindl, Thomas; Weis, Jürgen; Weitz, R. Thomas; Solodenko, Helena; Schmitz, Guido; Zschieschang, Ute; Klauk, Hagen; Acharya, Rachana
    A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current–voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.