03 Fakultät Chemie

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/4

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Institute: search.filters.UBSInstitut.Max-Planck-Institut für FestkörperforschungStart date: 2020End date: 2024Subject: search.filters.subject.530

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    Development and application of embedded methods to strongly and weakly correlated systems
    (2022) Vitale, Eugenio; Alavi, Ali (Prof. Dr.)
    Coupled cluster (CC) theory is a popular and reliable tool in quantum chemistry due to its improvable hierarchy of methods able to rapidly converge to the full configuration interaction (FCI) limit in weakly correlated systems. Although it represents one of the most efficient single reference methods to treat many-body correlations with high accuracy and reliable outcomes, it yields qualitatively erroneous results when applied to strongly correlated systems. Within this thesis, the Distinguishable Cluster (DC) method (i.e., a small modification of CC amplitude equations able to qualitatively describe strongly correlated systems), is combined with FCI Quantum Monte Carlo (FCIQMC) in order to present a new tailored approach, the tailored DC (TDC), which is more accurate than the corresponding tailored CC and the pure DC. To demonstrate this, the method is first benchmarked with a variety of test cases and then further evaluated with computation of spin-state splittings in a few Fe(II) complexes. The systematic improvability of the TDC method is shown as the active space is increased. In the last part of the thesis, a further embedding scheme to treat strong correlation effects is evaluated. Specifically, the development and application of a screened Coulomb formalism is discussed. This simple approach inspired by Random Phase approximation (RPA) shows to be extremely efficient in the dissociation of one- and two-dimensional hydrogen systems.
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    Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
    (2021) Geiger, Michael; Hagel, Marion; Reindl, Thomas; Weis, Jürgen; Weitz, R. Thomas; Solodenko, Helena; Schmitz, Guido; Zschieschang, Ute; Klauk, Hagen; Acharya, Rachana
    A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current–voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.