05 Fakultät Informatik, Elektrotechnik und Informationstechnik

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6

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Institute: search.filters.UBSInstitut.Stuttgart Research Centre of Photonic Engineering (SCoPE)Author: search.filters.author.Fruehauf, Norbert

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Now showing 1 - 3 of 3
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    High‐performance MEMS shutter display with metal‐oxide thin‐film transistors and optimized MEMS element
    (2023) Al Nusayer, Sheikh Abdullah; Schalberger, Patrick; Baur, Holger; Kleber, Florian; Fruehauf, Norbert
    Active matrix prestressed microelectromechanical shutter displays enable outstanding optical properties as well as robust operating performance. The microelectromechanical systems (MEMS) shutter elements have been optimized for higher light outcoupling efficiency with lower operation voltage and higher pixel density. The MEMS elements have been co-fabricated with self-aligned metal-oxide thin-film transistors (TFTs). Several optimizations were required to integrate MEMS process without hampering the performance of both elements. The optimized display process requires only seven photolithographic masks with ensuring proper compatibility between MEMS shutter and metal-oxide TFT process.
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    Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology
    (2023) Schellander, Yannick; Winter, Marius; Schamber, Maurice; Munkes, Fabian; Schalberger, Patrick; Kuebler, Harald; Pfau, Tilman; Fruehauf, Norbert
    In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.
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    High gain operational amplifier using enhancement and depletion mode a-IGZO TFTs
    (2022) Schellander , Yannick; Winter, Marius; Ge, Ge; Ouyang, Yunyi; Obermüller, Simon; Schalberger, Patrick; Fruehauf, Norbert
    An operational amplifier (OpAmp) consisting of twenty-two dual gate amorphous IGZO (a-IGZO) thin-film transistors (TFTs) is fabricated on a glass substrate. To achieve high voltage gains enhancement and depletion mode transistors are used. The enhancement mode TFTs work as drivers and the depletion mode TFTs act as depletion loads in the OpAmp circuit. The created OpAmp has a voltage gain (G) of 54.80 dB, a cutoff frequency (fc) of 75 Hz, a unity gain frequency (fug) of 10 kHz and a slew rate ts(up/down) of 0.15/0.30 V/µs. Transistors with different threshold voltages Uth on the same substrates are realized by using different semiconductor channel thicknesses. This is possible, as an increasing layer thickness of the semiconductor leads to a reduction of the threshold voltage Uth [1].