05 Fakultät Informatik, Elektrotechnik und Informationstechnik

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6

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Publication Type: search.filters.UBSTyp.ZeitschriftenartikelInstitute: search.filters.UBSInstitut.Institut für PhotovoltaikSubject: search.filters.subject.530

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    Top‐down approach to study chemical and electronic properties of perovskite solar cells : sputtered depth profiling versus tapered cross‐sectional photoelectron spectroscopies
    (2021) Das, Chittaranjan; Zia, Waqas; Mortan, Claudiu; Hussain, Navid; Saliba, Michael; Ingo Flege, Jan; Kot, Małgorzata
    A study of the chemical and electronic properties of various layers across perovskite solar cell (PSC) stacks is challenging. Depth‐profiling photoemission spectroscopy can be used to study the surface, interface, and bulk properties of different layers in PSCs, which influence the overall performance of these devices. Herein, sputter depth profiling (SDP) and tapered cross‐sectional (TCS) photoelectron spectroscopies (PESs) are used to study highly efficient mixed halide PSCs. It is found that the most used SDP‐PES technique degrades the organic and deforms the inorganic materials during sputtering of the PSCs while the TCS‐PES method is less destructive and can determine the chemical and electronic properties of all layers precisely. The SDP‐PES dissociates the chemical bonding in the spiro‐MeOTAD and perovskite layer and reduces the TiO2, which causes the chemical analysis to be unreliable. The TCS‐PES revealed a band bending only at the spiro‐MeOTAD/perovskite interface of about 0.7 eV. Both the TCS and SDP‐PES show that the perovskite layer is inhomogeneous and has a higher amount of bromine at the perovskite/TiO2 interface.
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    Boron partitioning coefficient above unity in laser crystallized silicon
    (2017) Lill, Patrick C.; Dahlinger, Morris; Köhler, Jürgen R.
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    Sheet conductance of laser-doped layers using a Gaussian laser beam : an effective depth approximation
    (2024) Hassan, Mohamed; Werner, Jürgen H.
    Laser doping of silicon with pulsed and scanned laser beams is now well-established to obtain defect-free, doping profile tailored, and locally selectively doped regions with a high spatial resolution. Picking the correct laser parameters (pulse power, pulse shape, and scanning speed) impacts the depth and uniformity of the melted region geometry. This work performs laser doping on the surface of single crystalline silicon, using a pulsed and scanned laser profile with a Gaussian intensity distribution. A deposited boron oxide precursor layer serves as a doping source. Increasing the local inter-pulse distance xirrbetween subsequent pulses causes a quadratic decrease of the sheet conductance Gshof the doped surface layer. Here, we present a simple geometric model that explains all experimental findings. The quadratic dependence stems from the approximately parabolic shape of the individual melted regions directly after the laser beam has hit the Si surface. The sheet resistance depends critically on the intersection depth dchand the distance xirrof overlap between two subsequent, neighboring pulses. The intersection depth dchquadratically depends on the pulse distance xirrand therefore also on the scanning speed vscanof the laser. Finally, we present a simple model that reduces the complicated three dimensional, laterally inhomogeneous doping profile to an effective two-dimensional, homogeneously doped layer which varies its thickness with the scanning speed.