05 Fakultät Informatik, Elektrotechnik und Informationstechnik

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6

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    Revealing the local pH value changes of acidic aqueous zinc ion batteries with a manganese dioxide electrode during cycling
    (2020) Bischoff, Christian Friedrich; Fitz, Oliver Sebastian; Burns, Jordan; Bauer, Manuel; Gentischer, Harald; Birke, Kai Peter; Henning, Hans-Martin; Biro, Daniel
    The research on aqueous zinc ion batteries (AZIB) is getting more attention as the energy transition continues to develop and the need for inexpensive and safe stationary storage batteries is growing. As the detailed reaction mechanisms are not conclusively revealed, we want to take an alternative approach to investigate the importance of pH value changes during cycling. By adding a pH-indicator to the electrolyte (2 M ZnSO4 + 0.1 M MnSO4), the local pH-value change during operation is visualized in operando. The overall pH value was found to increase during cycling whereas a major temporary pH drop in close proximity of the manganese dioxide electrode surface occurs. Additionally, this pH value change was quantified locally by in operando measurements with a pH micro electrode. Different electrolyte compositions with additives (sodium dodecyl sulfate (SDS), sulfuric acid (H2SO4)) and operation voltages were tested. The pH-potential-diagrams of manganese and zinc reveal pH value and potential limits, leading to active material dissolution at lower pH values and oxygen gas evolution at higher potentials >1.7 V. The procedure of combining a pH indicator, pH microelectrode measurements and pH-potential diagrams can be seen as an appropriate method to determine the recommendable working window of aqueous batteries.
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    Plasmonic gratings from highly doped Ge1-ySny films on Si
    (2021) Berkmann, Fritz; Ayasse, Markus; Schlipf, Jon; Mörz, Florian; Weißhaupt, David; Oehme, Michael; Prucnal, Slawomir; Kawaguchi, Yuma; Schwarz, Daniel; Fischer, Inga Anita; Schulze, Jörg
    Plasmonic modes in metal structures are of great interest for optical applications. While metals such as Au and Ag are highly suitable for such applications at visible wavelengths, their high Drude losses limit their usefulness at mid-infrared wavelengths. Highly n-doped Ge1-ySny alloys are interesting possible alternative materials for plasmonic applications in this wavelength range. Here, we investigate the use of highly n-doped Ge1-ySny films grown directly on Si by molecular beam epitaxy with varying Sn-content from 0% up to 7.6% for plasmonic grating structures. We compare plasma wavelengths and relaxation times obtained from electrical and optical characterization. While theoretical considerations indicate that the decreasing effective mass with increasing Sn content in Ge1-ySny films could improve performance for plasmonic applications, our optical characterization results show that the utilization of Ge1-ySny films grown directly on Si is only beneficial if material quality can be improved.