05 Fakultät Informatik, Elektrotechnik und Informationstechnik

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    Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology
    (2023) Schellander, Yannick; Winter, Marius; Schamber, Maurice; Munkes, Fabian; Schalberger, Patrick; Kuebler, Harald; Pfau, Tilman; Fruehauf, Norbert
    In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.
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    ItemOpen Access
    Printed chip interconnects for microLED displays
    (2025) Waldner, Kai; Baur, Holger; Schalberger, Patrick; Fruehauf, Norbert; Fuchs, Emmanuel; Ramaswamy, Prasanna; Toomey, Vincent; Drozdek, Sławomir
    This paper presents a newly developed process for interconnecting microICs with microLEDs through ultra‐precise dispensing of conductive silver‐based paste. Special cleaning and surface energy modification processes have been introduced to achieve interconnects with a width of 5 μm and a minimum pitch of 20 μm. The developed technology is part of the EU funded project “Building Active matrix MicroLED displays By Additive Manufacturing” (BAMBAM), which develops unique manufacturing technologies for realizing microLED displays without TFT backplanes.