05 Fakultät Informatik, Elektrotechnik und Informationstechnik
Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6
Browse
4 results
Search Results
Item Open Access Unified model for laser doping of silicon from precursors(2021) Hassan, Mohamed; Dahlinger, Morris; Köhler, Jürgen R.; Zapf-Gottwick, Renate; Werner, Jürgen H.Laser doping of silicon with the help of precursors is well established in photovoltaics. Upon illumination with the constant or pulsed laser beam, the silicon melts and doping atoms from the doping precursor diffuse into the melted silicon. With the proper laser parameters, after resolidification, the silicon is doped without any lattice defects. Depending on laser energy and on the kind of precursor, the precursor either melts or evaporates during the laser process. For high enough laser energies, even parts of the silicon’s surface evaporate. Here, we present a unified model and simulation program, which considers all these cases. We exemplify our model with experiments and simulations of laser doping from a boron oxide precursor layer. In contrast to previous models, we are able to predict not only the width and depth of the patterns on the deformed silicon surface but also the doping profiles over a wide range of laser energies. In addition, we also show that the diffusion of the boron atoms in the molten Si is boosted by a thermally induced convection in the silicon melt: the Gaussian intensity distribution of the laser beam increases the temperature-gradient-induced surface tension gradient, causing the molten Si to circulate by Marangoni convection. Laser pulse energy densities above H > 2.8 J/cm2 lead not only to evaporation of the precursor, but also to a partial evaporation of the molten silicon. Without considering the evaporation of Si, it is not possible to correctly predict the doping profiles for high laser energies. About 50% of the evaporated materials recondense and resolidify on the wafer surface. The recondensed material from each laser pulse forms a dopant source for the subsequent laser pulses.Item Open Access Fourier spotting : a novel setup for single-color reflectometry(2022) Siegel, Johannes; Berner, Marcel; Werner, Jürgen H.; Proll, Günther; Fechner, Peter; Schubert, MarkusSingle-color reflectrometry is a sensitive and robust detection method in optical biosensor applications, for example for bioanalysis. It is based on the interference of reflected monochromatic radiation and is label free. We present a novel setup for single-color reflectometry based on the patented technology of Berner et al. from 2016. Tilting areas of micro-mirrors allow us to encode the optical reflection signal of an analyte and reference channel into a particular carrier frequency with the amplitude being proportional to the local reflection. Therefore, a single photodiode is sufficient to collect the signals from both channels simultaneously. A 180∘ phase shift in the tilt frequency of two calibrated micro-mirror areas leads to a superposition of the analyte and reference signal which enables an efficient reduction of the baseline offset and potential baseline offset drift. A performance test reveals that we are able to detect changes of the refractive index n down to Δn < 0.01 of saline solutions as regents. A further test validates the detection of heterogeneous binding interaction. This test compromises immobilized testosterone-bovine serum albumin on a three-dimensional layer of biopolymer as ligand and monoclonal anti-testosterone antibodies as analyte. Antibody/antigen binding induces a local growth of the biolayer and change in the refractive index, which is measured via the local change of the reflection. Reproducible measurements enable for the analysis of the binding kinetics by determining the affinity constant KA = 1.59 × 10- 7 M- 1. In summary, this work shows that the concept of differential Fourier spotting as novel setup for single-color reflectometry is suitable for reliable bioanalysis.Graphical AbstractItem Open Access Solar cells with laser doped boron layers from atmospheric pressure chemical vapor deposition(2022) Zapf-Gottwick, Renate; Seren, Sven; Fernandez-Robledo, Susana; Wete, Evariste-Pasky; Schiliro, Matteo; Hassan, Mohamed; Mihailetchi, Valentin; Buck, Thomas; Kopecek, Radovan; Köhler, Jürgen; Werner, Jürgen H.We present laser-doped interdigitated back contact (IBC) solar cells with efficiencies of 23% on an area of 244 cm2 metallized by a screen-printed silver paste. Local laser doping is especially suited for processing IBC cells where a multitude of pn-junctions and base contacts lay side by side. The one-sided deposition of boron-doped precursor layers by atmospheric pressure chemical vapor deposition (APCVD) is a cost-effective method for the production of IBC cells without masking processes. The properties of the laser-doped silicon strongly depend on the precursor’s purity, thickness, and the total amount of boron dopants. Variations of the precursor in terms of thickness and boron content, and of the laser pulse energy density, can help to tailor the doping and sheet resistance. With saturation-current densities of 70 fA/cm2 at sheet resistances of 60 Ohm/sq, we reached maximum efficiencies of 23% with a relatively simple, industrial process for bifacial IBC-cells, with 70% bifaciality measured on the module level. The APCVD-layers were deposited with an inline lab-type system and a metal transport belt and, therefore, may have been slightly contaminated, limiting the efficiencies when compared to thermal-diffused boron doping. The use of an industrial APCVD system with a quartz glass transport system would achieve even higher efficiencies.Item Open Access How much photovoltaic efficiency is enough?(2022) Werner, Jürgen H.At present, the purchasing prices for silicon-based photovoltaic modules with 20% efficiency and more are between 20 and 40 EURct/Wp. These numbers correspond to 40 to 80 EUR/m2 and are in the same range as the mounting costs (material prices plus salaries) of such modules. Installers and operators of photovoltaic systems carefully balance the module and mounting costs when deciding among modules of different efficiencies. This contribution emulates the installer’s decision via a simple, analytical module mounting decision (Mo2De) model. A priori, the model, and the resulting conclusions are completely independent of the photovoltaically active material inside the modules. De facto, however, based on the present state (cost, efficiency, reliability, bankability, etc.) of modules fabricated from (single) crystalline Si cells, conclusions on other photovoltaic materials might also be drawn: On the one hand, the model suggests that lower-efficiency modules with efficiencies below 20% will be driven out of the market. Keeping in mind their installation costs, installers will ask for large discounts for lower-efficiency modules. Technologies based on organic semiconductors, CdTe, CIGS, and even multicrystalline Si, might not survive in the utility market, or in industrial and residential applications. Moreover, this 20% mark will soon reach 23%, and finally will stop at around 25% for the very best, large-area (square meter sized) commercial modules based on single crystalline silicon only. On the other hand, it also seems difficult for future higher-efficiency modules based on tandem/triple cells to compete with standard Si-based reference modules. Compared to their expected higher efficiency, the production costs of tandem/triple cell modules and, therefore, also their required markup in sales, might be too high. Depending on the mounting cost, the Mo2De-model predicts acceptable markup values of 1 EURct/Wp (for low mounting costs of around 10 EUR/m2) to 11 EURct/Wp (for high mounting costs of 100 EUR/m2) if the module efficiency increases from 23% to 30%. Therefore, a 23% to 24% module efficiency, which is possible with silicon cells alone, might be enough for many terrestrial photovoltaic applications.