05 Fakultät Informatik, Elektrotechnik und Informationstechnik
Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6
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Item Open Access Analytic free-energy expression for the 2D-Ising model and perspectives for battery modeling(2023) Markthaler, Daniel; Birke, Kai PeterAlthough originally developed to describe the magnetic behavior of matter, the Ising model represents one of the most widely used physical models, with applications in almost all scientific areas. Even after 100 years, the model still poses challenges and is the subject of active research. In this work, we address the question of whether it is possible to describe the free energy A of a finite-size 2D-Ising model of arbitrary size, based on a couple of analytically solvable 1D-Ising chains. The presented novel approach is based on rigorous statistical-thermodynamic principles and involves modeling the free energy contribution of an added inter-chain bond DAbond(b, N) as function of inverse temperature b and lattice size N. The identified simple analytic expression for DAbond is fitted to exact results of a series of finite-size quadratic N N-systems and enables straightforward and instantaneous calculation of thermodynamic quantities of interest, such as free energy and heat capacity for systems of an arbitrary size. This approach is not only interesting from a fundamental perspective with respect to the possible transfer to a 3D-Ising model, but also from an application-driven viewpoint in the context of (Li-ion) batteries where it could be applied to describe intercalation mechanisms.Item Open Access Optimization of disassembly strategies for electric vehicle batteries(2021) Baazouzi, Sabri; Rist, Felix Paul; Weeber, Max; Birke, Kai PeterVarious studies show that electrification, integrated into a circular economy, is crucial to reach sustainable mobility solutions. In this context, the circular use of electric vehicle batteries (EVBs) is particularly relevant because of the resource intensity during manufacturing. After reaching the end-of-life phase, EVBs can be subjected to various circular economy strategies, all of which require the previous disassembly. Today, disassembly is carried out manually and represents a bottleneck process. At the same time, extremely high return volumes have been forecast for the next few years, and manual disassembly is associated with safety risks. That is why automated disassembly is identified as being a key enabler of highly efficient circularity. However, several challenges need to be addressed to ensure secure, economic, and ecological disassembly processes. One of these is ensuring that optimal disassembly strategies are determined, considering the uncertainties during disassembly. This paper introduces our design for an adaptive disassembly planner with an integrated disassembly strategy optimizer. Furthermore, we present our optimization method for obtaining optimal disassembly strategies as a combination of three decisions: (1) the optimal disassembly sequence, (2) the optimal disassembly depth, and (3) the optimal circular economy strategy at the component level. Finally, we apply the proposed method to derive optimal disassembly strategies for one selected battery system for two condition scenarios. The results show that the optimization of disassembly strategies must also be used as a tool in the design phase of battery systems to boost the disassembly automation and thus contribute to achieving profitable circular economy solutions for EVBs.Item Open Access Modulationsdotierte Germanium-MOSFETs für den Spin-Transport in zweidimensionalen Lochgasen(2023) Weißhaupt, David; Schulze, Jörg (Prof. Dr. habil.)Die Halbleiter-Spintronik beschäftigt sich mit der Entwicklung neuer Bauelementkonzepte, die den intrinsischen Spin-Freiheitsgrad des Elektrons ausnutzen. Dabei werden spin-basierte Logik-Bauelemente aufgrund des geringen Energiebedarfs zum Umschalten der Spin-Orientierung als aussichtsreiche Kandidaten für zukünftige Transistor-Anwendungen diskutiert. Anzuführen sind hierfür beispielsweise der Spin-Feldeffekttransistor (FET) nach Datta und Das sowie der Spin-Metall-Oxid-Halbleiter-FET von Sugahara und Tanaka. Für diese Bauteilkonzepte müssen jedoch vier grundlegende Komponenten beherrscht werden: Die Spin-Information muss in den Halbleiter eingebracht (Spin-Injektion), transportiert sowie evtl. manipuliert (Spin-Transport & Spin-Manipulation) und final wiederum detektiert (Spin-Detektion) werden. Für die Integration dieser Bauelemente in die bestehende komplementäre Metall-Oxid-Halbleiter-Technologie ist eine elektrische Spin-Injektion bzw. Spin-Detektion notwendig. Die Realisierung von halbleiterbasierten spintronischen Bauelementen erfordert allerdings ein Materialsystem, das gute Spin-Transporteigenschaften sowie eine starke Spin-Bahn-Wechselwirkung für eine potenzielle Spin-Manipulation aufweist. Als vielversprechendes System hat sich hier das zwei-dimensionale Lochgas (engl. „two-dimensional hole gas“, 2DHG), welches in einer Si1-xGex/Ge/Si1-xGex Heterostruktur gebildet wird, erwiesen. Trotz der guten Eignung dieses Systems konnte bisher noch keine elektrische Spin-Injektion demonstriert werden, hauptsächlich wegen der Schwierigkeit, zuverlässige ferromagnetische Kontakte mit dem vergrabenen 2DHG herzustellen. Diese Arbeit befasst sich nun mit der elektrischen Spin-Injektion und Spin-Detektion in ein hochbewegliches (µ = (3,02 ± 0,01) ⋅ 10^4 cm^2/Vs) Ge 2DHG. Die für das Ge 2DHG zugehörige Si1-xGex/Ge/Si1-xGex Heterostruktur wurde dabei mittels Molekularstrahlepitaxie epitaktisch auf einem Si-Substrat gezüchtet. Um dieses Ziel zu erreichen, werden verschiedene Untersuchungsschwerpunkte adressiert. Zunächst werden zur Optimierung der Spin-Transporteigenschaften unterschiedliche Designs der Si1-xGex/Ge/Si1-xGex Heterostruktur auf der (100) Kristallorientierung untersucht. Dazu wurden anhand von Hall-Strukturen Tieftemperaturmagnetwiderstandsmessungen durchgeführt. Hierbei werden Shubnikov-de Haas Oszillationen beobachtet, aus denen die Ladungsträgerdichte, effektive Masse und Quantenstreuzeit des Ge 2DHGs extrahiert werden. Das daraus resultierende optimierte Design mit einer Modulationsdotierung von N_A = 5 ⋅ 10^17 cm^-3 und einer Ge-Quantentopf (engl. „quantum well“, QW) Dicke von d = 15 nm wird dann auf die (111) Kristallorientierung übertragen. Für die elektrische Spin-Injektion und Spin-Detektion werden als ferromagnetischen Kontakt dünne Mn5Ge3-Schichten, die mittels Interdiffusion direkt in den Ge-QW wachsen, benutzt. Dazu wird vor der Bildung der Kontakte die gesamte Si1-xGex-Deckschicht oberhalb des Ge-QWs mithilfe eines Trocken-Ätzprozesses entfernt. Zur Untersuchung der magnetischen Eigenschaften werden die so hergestellten Mn5Ge3-Mikromagnete mit einem supraleitenden Quanteninterferenzmagnetometer analysiert. Dabei konnte nur für die (111) Kristallorientierung die ferromagnetische Natur der gewachsenen Mn5Ge3-Schicht nachgewiesen werden. Durch die Variation der Formanisotropie ergeben sich unterschiedliche Koerzitivfeldstärken. Der Nachweis der elektrischen Spin-Injektion erfolgt schließlich anhand von Magnetwiderstandsmessungen an lateralen Mn5Ge3/Ge 2DHG/Mn5Ge3 Spin-Ventil Bauelementen. Dazu werden die zuvor untersuchten ferromagnetischen Mn5Ge3-Kontakte in einem Abstand von ca. l ≈ 135 nm im vergrabenen Ge-QW platziert. Die Experimente zeigen einen Riesenmagnetowiderstand (engl. „giant magneto resistance“, GMR) als Nachweis einer erfolgreichen elektrischen Spin-Injektion. Neben der elektrischen Spin-Injektion beinhaltet das auch den Spin-Transport im Ge 2DHG sowie die finale Spin-Detektion am zweiten ferromagnetischen Mn5Ge3-Kontakt. In Übereinstimmung zu den Spin-Transportuntersuchungen zeigt das GMR-Signal eine starke Abhängigkeit von der Temperatur und konnte bis zu einer maximalen Temperatur von T = 13 K beobachtet werden. Neben der elektrischen Spin-Injektion und Spin-Detektion wird für die Realisierung von Spin-Transistoren eine funktionierende Gate-Technologie vorausgesetzt. Um diese zu demonstrieren, werden zunächst auf Basis des Ge 2DHGs klassische modulationsdotierte Feldeffekttransistoren (MODFET) hergestellt und elektrisch charakterisiert. Mit einem An-Aus-Verhältnis von I_ON/I_OFF = 3,2⋅10^6 bei einer Steilheit von SS = 64 mV⁄dec könnte der Ge 2DHG MODFET unabhängig von der Halbleiter-Spintronik auch für zukünftige Tieftemperaturanwendungen interessant sein. Der Spin-FET nach Datta und Das würde dann durch das Tauschen der Source-Drain-Kontakte in ferromagnetische Mn5Ge3-Kontakte entstehen. Technologisch bedingt sind im Rahmen dieser Arbeit allerdings nur Transistoren mit einer minimalen Gate-Länge von L = 1 µm herstellbar. Da der Spin im Ge 2DHG über diese Länge nicht transportiert werden kann, ist die Realisierung eines Spin-Transistors technologiebedingt nicht möglich.Item Open Access Dependable reconfigurable scan networks(2022) Lylina, Natalia; Wunderlich, Hans-Joachim (Prof.)The dependability of modern devices is enhanced by integrating an extensive number of extra-functional instruments. These are needed to facilitate cost-efficient bring-up, debug, test, diagnosis, and adaptivity in the field and might include, e.g., sensors, aging monitors, Logic, and Memory Built-In Self-Test (BIST) registers. Reconfigurable Scan Networks (RSNs) provide a flexible way to access such instruments as well the device's registers throughout the lifetime, starting from post-silicon validation (PSV) through manufacturing test and finally during in-field operation. At the same time, the dependability properties of the system can be affected through an improper RSN integration. This doctoral project overcomes these problems and establishes a methodology to integrate dependable RSNs for a given system considering the most relevant dependability aspects, such as robustness, testability, and security compliance of RSNs.Item Open Access Digital pre-distortion of broadband communication links using open-loop architecture(2021) Wiewel, FlorianThe ever-increasing demand for higher data rates and lower latency in wireless communications ultimately forces the developers of the underlying systems to use broadband links with higher order modulation formats to meet this demand. The use of these modulation formats results in strict linearity requirements on the system. On top of that power, efficiency is also an important aspect, since it has an impact on the operational costs and ecological compatibility. In a typical macrocell for modern wireless communication systems, the power amplifier (PA) of the base station consumes about 60% of the overall power and it is also the PA, which typically exhibits the strongest nonlinear transfer characteristic in the system. Unfortunately, power efficiency and linearity represent conflicting requirements in PA design. As a result, a compromise between these two requirements has to be made. Usually, the PA is designed for high power efficiency and with moderate nonlinear transfer characteristics. To compensate for the nonlinearity in the PA a technique called digital pre-distortion (DPD) is applied, which estimates the nonlinearity in the PAs transfer characteristic and applies the corresponding inverse transfer function to the complex baseband input signal of the PA in the digital domain. In contrast to many of the DPD experiments found in literature, which are applied to signals with bandwidths in the range of tens of megahertz, the targeted linearization bandwidth in this work is 5 GHz. For this purpose an open-loop DPD architecture based on the Volterra theory of nonlinear systems specifically the p-th order inverse has been implemented in software and applied to different amplifiers including a waveguide E-band transmitter operating around 73 GHz. Up to a signal bandwidth of around 1 GHz significant improvements in terms of signal quality could be observed in the conducted experiments. For signals with higher bandwidths problems with signal integrity caused the DPD to fail. Finally, the various problems are analyzed and potential improvements for increasing the DPD performance for wideband signals are suggested.Item Open Access High‐stable lead‐free solar cells achieved by surface reconstruction of quasi‐2D tin‐based perovskites(2023) Yang, Feng; Zhu, Rui; Zhang, Zuhong; Su, Zhenhuang; Zuo, Weiwei; He, Bingchen; Aldamasy, Mahmoud Hussein; Jia, Yu; Li, Guixiang; Gao, Xingyu; Li, Zhe; Saliba, Michael; Abate, Antonio; Li, MengTin halide perovskites are an appealing alternative to lead perovskites. However, owing to the lower redox potential of Sn(II)/Sn(IV), particularly under the presence of oxygen and water, the accumulation of Sn(IV) at the surface layer will negatively impact the device's performance and stability. To this end, this work has introduced a novel multifunctional molecule, 1,4‐phenyldimethylammonium dibromide diamine (phDMADBr), to form a protective layer on the surface of Sn‐based perovskite films. Strong interactions between phDMADBr and the perovskite surface improve electron transfer, passivating uncoordinated Sn(II), and fortify against water and oxygen. In situ grazing incidence wide‐angle X‐ray scattering (GIWAXS) analysis confirms the enhanced thermal stability of the quasi‐2D phase, and hence the overall enhanced stability of the perovskite. Long‐term stability in devices is achieved, retaining over 90% of the original efficiency for more than 200 hours in a 10% RH moisture N2 environment. These findings propose a new approach to enhance the operational stability of Sn‐based perovskite devices, offering a strategy in advancing lead‐free optoelectronic applications.Item Open Access Proof of concept : the GREENcell : a lithium cell with a F-, Ni- and Co-Free cathode and stabilized in-situ LiAl alloy anode(2023) Schad, Kathrin; Welti, Dominic; Birke, Kai PeterGiven the rising upscaling trend in lithium-ion battery (LiB) production, there is a growing emphasis on the environmental and economic impacts alongside the high energy density demands. The cost and environmental impact of battery production primarily arise from the critical elements Ni, Co, and F. This drives the exploration of Ni-free and Co-free cathode alternatives such as LiMn 2O 4 (LMO) and LiFePO 4 (LFP). However, the absence of Ni and Co results in reduced capacity and insufficient cyclic stability, particularly in the case of LMO due to Mn dissolution. To compensate for both low cathode capacitance and low cycle stability, we propose the GREENcell, a lithium cell combining a F-free polyisobutene (PIB) binder-based LMO cathode with a stabilized in -situ LiAL alloy anode. A LiAl alloy anode with the chemical composition of LiAl already shows a theoretical capacity of 993 Ah·kg−1. Therefore, it promises extraordinarily higher energy densities compared to a commercial graphite anode with a capacity of 372 Ah·kg−1. Following an iterative development process, different optimization strategies, especially those targeting the stability of the Al-based anode, were evaluated. During Al foil selection, foil purity and thickness could be identified as two of the dominant influencing parameters. A pressed-in stainless steel mesh provides both mechanical stability to the anode and facilitates alloy formation by breaking up the Al oxide layer beforehand. Additionally, a binder-stabilized Al oxide or silicate layer is pre-coated on the Al surface, posing as a SEI-precursor and ensuring a uniform liquid electrolyte distribution at the phase boundary. Employing a commercially available Si-containing Al alloy mitigated the mechanical degradation of the anode, yielding a favorable impact on long-term stability. The applicability of the novel optimized GREENcell is demonstrated using laboratory coin cells with LMO and LFP as the cathode. As a result, the functionality of the GREENcell was demonstrated for the first time, and thanks to the anode stabilization strategies, a capacity retention of >70% after 200 was achieved, representing an increase of 32.6% compared to the initial Al foil.