Universität Stuttgart
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Item Open Access Atom probe study on CuNi thin films : miscibility gap and grain boundary segregation(2023) Duran, Rüya; Schmitz, Guido (Prof. Dr. Dr. h. c.)In dieser Arbeit wurde die Lage der Mischungslücke, und die Korngrenzsegregation im Legierungssystem, Kupfer-Nickel, per Atomsondentomographie (APT) analysiert. Zur Untersuchung der Mischungslücke eines binären Systems mit langsamer Diffusion wurde ein neues Verfahren verwendet. Multilagen aus Cu- und Ni- Dünnschichten wurden mittels Ionenstrahlbeschichtung (IBS) auf Wolframpfosten beschichtet und durch fokussierte Ionenstrahlung (FIB) geformt. Bei drei unterschiedlichen Temperaturen, zwischen 573 und 673 K, wurden isotherme Auslagerungssequenzen an einem Ultrahochvakuumofen (UHV) durchgeführt und der Mischungsprozess analysiert. Ein Modell des Diffusionsprozesses wurde mittels mathematischer Überlegungen erstellt. Durch das Fitten der experimentellen Kompositionsprofile mittels dieses Modells konnten die Gleichgewichtskonzentrationen der Schichten auch mit relativ kurzen Auslagerungszeiten ermittelt werden. Darüber hinaus konnten aus den diffusionskontrollierten Zeit- und Temperaturdaten physikalische Eigenschaften wie der effektive Diffusionskoeffizient (Gitterdiffusion einschließlich Defektdiffusion) bestimmt werden. Dieser betrug Deff = 1.86 ∙ 10-10 m2/s ∙ exp(-164 kJ mol-1/RT). Während dem Vermischen wurde die Änderung der multilagigen Mikrostruktur bis zur vollständigen Mischung bei 623 und 673 K beobachtet, wobei Korngrenzen als schneller Diffusionsweg eine wichtige Rolle spielen. Bei 573 K wurde Nichtmischbarkeit experimentell deutlich nachgewiesen, wobei die Phasengrenzen bei cNi=26 at.% und cNi=66 at.% liegen. Mit diesen Phasengrenzen wurde die Mischungslücke über eine Redlich-Kister-Parametrisierung der Gibbs‘schen freien Energie über den gesamten Konzentrationsbereich rekonstruiert. Hierin wurde für die kritische Temperatur, TC, 608 K bei einer Konzentration von 45 at% Ni gefunden. Im zweiten Teil wurde die Korngrenzsegregation durch die FIB/tEBSD- (Transmissions-Elektronen-Rückstreubeugung) Technik, in Korrelation zu APT-Messung charakterisiert. Vier Legierungen mit einem Ni-Anteil zwischen 25 und 85 at.% wurden auf Wolframpfosten per IBS beschichtet, und bei 700 K für 24 h wärmebehandelt. Die Segregation von Cu in die Korngrenzen wurde beobachtet. Durch die Verwendung eines theoretischen Models wurde die Exzess-Kurve über den gesamten Konzentrationsbereich, und die Korngrenz-Formationsenergie auf Basis der experimentellen Daten berechnet. Die tEBSD-Analyse während der FIB-Präparation erlaubt die Identifikation der Körner und deren Orientierung. Ein neues Verfahren wurde entwickelt, um mithilfe der Orientierung benachbarter Körner, Berechnungen zur Ermittlung der Korngrenzorientierung durchzuführen und somit die Orientierung natürlicher Korngrenzen zu bestimmen. Mit diesem Verfahren konnte der zeitliche Aufwand dieser anspruchsvollen Auswertung (verglichen zur herkömmlichen Methode mittels TEM-Untersuchung) stark reduziert werden, so dass eine quantitative Analyse vieler Korngrenzen möglich wurde. Aus den einzelnen Korngrenzorientierungen wurde die Korngrenzrotation, und die jeweiligen Anteile an Kippung und Drehung berechnet. Eine Abhängigkeit der Feststoffsegregation vom Kipp- und Drehanteil der Korngrenze wurde beobachtet, die am kleinsten für die reine Kipp- und Drehrotation war. Die ermittelten Segregationsweiten sind signifikant größer als die strukturellen Korngrenzweiten und bewegen sich zwischen 12 und 85 Å. Dieses Verhalten wurde durch eine künstliche Verbreiterung der Korngrenze erklärt, die durch eine Flugbahnabweichung der Korngrenzatome während der Verdampfung verursacht wurde. Eine Korngrenzweite von w0 = (10.1 ± 1.5) Å wurde für eine unverfälschte Korngrenze gefunden.Item Open Access Three dimensional analytical study of thin film battery electrodes(2021) Abdelkarim, Ahmed; Schmitz, Guido (Prof. Dr. Dr. h. c.)Li ions play a major role in batteries for energy storage. On the other hand, Li is notoriously challenging to be reliably detected with most microscpic techniques.Owing to its weak scattering form factor, low X-ray emission or peak overlaps in EELS spectroscopy, precise microscopic analysis of Li in battery materials is delicate. The aim of this study was to investigate a very sensitive analysis of the ionic transport on a microscopic, even on an atomic level scale. Well controlled amorphous lithium iron phosphate (LFP) thin films were prepared by ion-beam sputter deposition. In a subsequent annealing step, amorphous films were then crystallized. The electrochemical performance of both LFP phases is checked in cyclo-voltammetry, while structure and microstructure are confirmed by XRD and TEM, respectively. Cycling reversibility over 7000 cycles with a retention more than 92 % is accomplished for the crystalline LFP, whereas the amorphous phase is electrochemically nonfunctional. Intercalation of LFP thin films was studied as a function of film thickness (25 - 250 nm). The intercalation kinetics is systematically quantified over a wide range of scanning rates (0.004 to 400 mV s-1 in cyclic voltammetry experiments. Two different diffusion regimes for the material undergoing two phase reaction were explained with the help of the modified Randles-Sevcik equation. Slow Li diffusion in the thickest films was recorded. Dependence of the peak current on the layer thickness is explained in terms of increasing the grain boundary (GB) area. Opposite to the peak fluxes, the overpotential was interestingly found to be independent of the layer thickness. Less electrical driving force is required to force the same current in thick film. The grain boundaries represent an electroactive interface at which the overpotential appears. And hence, the grain boundaries work as fast conduction paths for faster Li ions diffusion. Thus, the total current is controlled by the total grain boundary area rather than the thin film surface. LiFePO4 (LFP) is then 3-dimensionally studied by laser-assisted Atom Probe Tomography (APT). The effects of laser power on the quantitative analysis of the amorphous phase by atom probe tomography were considered. The systematic investigation of amorphous samples presented herein demonstrates quantification of constituent elements, particularly lithium. Stoichiometric ratios relative to all elements (Li+Fe+P+O) and to the stable element (Fe) were calculated; P and O reveal reverse behavior against laser power. Li, on the other hand, after considering its migration, increases with rising laser power. Even though APT measurements at cryogenic temperatures (60 K) were performed, migration of Li ions in some LFP states was observed. In response to the applied measurement fields, Li ions are undoubtedly redistributed. In the amorphous LFP material, we observe a strong Li gradient towards the tip front, which hinders reliable analysis. Obviously, during measurement, Li is drawn towards the tip front and this effect increases with increasing laser power. The remaining host elements, Fe, P, and O, remain homogeneously distributed. New unique insights into the mechanisms of Li movements are provided. Li is pulled and Li enrichment/depletion regions are observed. A new term "Li shooting" is addressed to describe these Li movements. It is demonstrated that the ions indeed experience a field-dependent drift. By mathematically modelling the resulting composition profiles, the Li diffusivity is quantitatively evaluated. In a direct comparison between the amorphous and the crystalline LFP films of identical chemical composition, it is shown that the diffusivity of the amorphous structure is orders of magnitude faster than that of the crystalline state at a temperature of 60 K. Most notably, this is the first study to investigate the capabilities of APT in LFP at different de-/lithiation states. Li compositions show a wave-like distribution as a result of existence the Li rich/poor phases. 3D iso-surfaces and 2D orthoslices were provided to differentiate between the two phases. Li, in the fully lithiated phase, reaches its ideal stoichiometric ratio, while it is overestimated in the fully delithiated phase. Obviously, the thin films include inactive LFP regions. They were highlighted in this thesis for the first time by atom probe analysis. To quantify the two-phase nature of LFP, statistical analyses of the dis/charged LFP at different lithiation states were performed. Observed frequency distributions of the concentrations of small clusters were compared to the binomial distributions and discussed in detail. Deviations between observed and binomial distributions were represented in the Pearson coefficient to demonstrate the phase separation in the atom probe analysis. Our results provide an evidence to statistically understand the local microstructure evolution in battery materials, which is a pivotal characteristic of battery performance. On the other hand, APT has shown some constraints to microscopy differentiate between the two phases. Although APT measurements were performed at cryo-temperature, Li showed a displacement during measurements. Contrastingly, most of materials are fractured early at ultra low temperatures.Item Open Access Hydrogen transport in thin films : Mg-MgH2 and Ti-TiH2 systems(2018) Hadjixenophontos, EfiHydrogen storage has become progressively important due to increasing energy demand. Magne-sium (Mg/MgH2) is one of the most promising elements of hydrogen uptake, however, the slow kinetics and need for high temperatures during dehydrogenation make this material challenging for mobile applications. Meanwhile, Titanium (Ti/TiH2/TiO2) draws attention due to its catalytic effect in hydrogenation of other metals with higher capacities. A comprehensive way to quantitatively char-acterize the kinetics of hydride formation in both systems (Mg and Ti) is shown here. A technique allowing a large range of pressures and temperatures (room temperature to 300 °C and from 0.05 bar up to 100 bar) is developed successfully. Thin films (50-1000 nm), deposited by ion beam sput-tering (PVD), are used because of their smooth surface and defined structure. In order to study hydrogen transport precisely, X-ray diffraction (XRD), electron microscopy (SEM/FIB/TEM) and electric resistance measurements are used. In the case of Mg, while a Pd coating is used as catalyst, the hydride is formed from the surface towards the substrate and transformation in the morpholo-gy is observed. Parabolic law is followed and the diffusion coefficient of hydrogen in MgH2 is ob-tained at room temperature (2.67 · 10-17 cm2/s). Additionally, a model is created to fit the experi-mental change in resistance during hydrogen loading and shows the changes in the behavior of thicker layers. The interface between Pd/Mg is discussed, since Mg5Pd2 and Mg6Pd are formed at high temperatures and are most dominant over dehydrogenation. However, at room temperature, this interface appears to be more stable. The activation energy of hydrogenation is calculated ex-perimentally from an Arrhenius plot to be equal to Ea = 22.6 ± 2.0 kJ/mol and the pre-factor D0 = 3904 cm2/s. Additional attention is given to magnesium hydride as an anode electrode in Li-ion bat-teries. TEM investigations of thin film electrodes demonstrate the complete lithiation of the mate-rial however, with drastic volume changes, leading to bad reversibility. In Ti the thin oxide layer naturally formed on the surface, appears to play a dominant role in the kinetics of hydrogen transport leading to a linear kinetics. A pressure dependency is observed, while an experimental evaluation of the permeation coefficient in the oxide is also discussed. Important information on the hydrogen transport is obtained in both systems, giving an input for further improvements of such hydrides.Item Open Access Misfit-layered cobalt oxides for thermoelectric energy conversion(2017) Büttner, Gesine; Weidenkaff, Anke (Prof. Dr.)The conversion of waste heat into electrical current by a thermoelectric converter can significantly contribute to a more sustainable usage of our resources. The p-type misfit-layered [Ca2CoO3-δ][CoO2]1.62 is known for its promising conversion efficiency, which yet needs to be improved significantly for commercial applications. The efficiency of a material increases with the Figure of Merit ZT=σα^2/κ, with Seebeck coefficient α, electrical conductivity σ, and thermal conductivity κ. The aim of this thesis is to provide a better understanding of the electrical and the thermal properties of the complex [Ca2CoO3 δ][CoO2]1.62 and to use this understanding to improve the efficiency of converters. Accordingly, (i) the increase of ZT via cation substitution is shown; (ii) a better understanding of the electrical transport above room temperature is developed; (iii) the effect of stoichiometric defects and secondary phases on the thermoelectric properties is investigated. Finally, (iv) [Ca2CoO3 δ][CoO2]1.62 - CaMn0.97W0.03O3 δ - converters are fabricated and the efficiency is increased by a suitable converter design. More specifically, the unexplored influence of Ru and In substitution on the thermoelectric properties of the polycrystalline [Ca2CoO3 δ][CoO2]1.62 is investigated. While In does not have a positive effect, Ru for Co substitution increases ZT up to 20 %. This increase stems from a strong reduction of the thermal conductivity - which is probably induced by resonance scattering - while the decrease of the power factor α^2 σ is minor. The electrical transport mechanism of pure and Ru-substituted [Ca2CoO3 δ][CoO2]1.62 between room temperature and 800 K so far lacks a coherent theoretical model. Surprisingly, the framework of Anderson localization, which was developed to describe conduction in an impurity band of semiconductors, can be applied to the oxide. The Anderson model assumes that transport happens via charge-carrier hopping in a random Coulomb potential. For [Ca2CoO3 δ][CoO2]1.62, charges are considered to hop between Co sites in the CoO2 layer, while the random potential originates from interactions with the mismatched Ca2CoO3 δ layer. The presence of the ionized Ru atoms further alters the Coulomb potential, which increases the activation energy of the transport behavior. This understanding might contribute to the development of better theoretical models for the prediction of the thermoelectric properties of substituted [Ca2CoO3 δ][CoO2]1.62 compounds. A further improvement of the materials efficiency can be achieved by systematic introduction of stoichiometric defects and impurity phases. Here, the unexplored influence of the Co/Ca ratio on the thermoelectric properties of [Ca2 wCoO3 δ][CoO2]1.62, and the effect of Co3O4 impurity phase are investigated. It is shown that an increasing Co/Ca ratio in the [Ca2 wCoO3 δ][CoO2]1.62 phase leads to a larger figure of merit ZT induced by a strong resistivity drop. The decrease of resistivity stems from additional p-type charge carriers created by the formation of Ca vacancies. The Co3O4 impurity phase increases the thermal conductivity of the composite samples and leads to a reduction of ZT when the volume fraction of the Co3O4 phase is increased from 1% to 3%. Hence, the best figure of merit is expected close to the upper phase boundary of the [Ca2 wCoO3 δ][CoO2]1.62 phase. Not only the figures of merit of the materials, but also the design of a thermoelectric converter determines the device efficiency. In a converter, a p-type and a suitable n-type thermoelectric material are connected electrically in series and thermally in parallel. Here, [Ca2 wCoO3 δ][CoO2]1.62 is combined with the n-type CaMn0.97W0.03O3-δ and the device efficiency is improved by a variation of the ratio A_p/A_n of the cross section areas of the legs. The good agreement between the experimental values and the predictions of the compatibility model show the high quality of the fabricated devices and the value of the model for the optimization of the converter design. The adjustment of A_p/A_n improves the power output and the efficiency of the converters, where the best volume and area power densities exceed published high temperature values. The achieved efficiency of 1.08 % at a temperature of 1085 K at the hot side is close to the theoretical expected efficiency and can be further improved via ZT.Item Open Access Deformation and fracture mechanical properties of precursor-derived Si-C-N ceramics(2007) Janakiraman, Narayanan; Aldinger, Fritz (Prof. Dr.)This thesis deals with the investigation of the deformation and fracture mechanical properties of precursor-derived (PDC) Si-C-N ceramics. The materials were synthesized from a liquid poly(ureamethylvinyl)silazane precursor. In order to access the intrinsic mechanical behavior of the materials, fully dense defect-free PDC specimens devoid of process induced extrinsic features were fabricated using a special casting and crosslinking process and controlled thermolysis procedures. The investigations were performed on a range of Si-C-N-(H) PDC with progressively varying material structures from hydrogenated amorphous to phase-separated nanocrystalline microstructures, from which the influence of material structure on the mechanical behavior was analyzed. The crack-tip fracture toughness (KI0) of the materials were evaluated using the novel crack opening displacement (COD) method. The estimated KI0 values ranged from 0.6 to 1.2 MPa m1/2. The variation in KI0 was well correlated with the structural evolution in the materials, effected by the progressive stripping of the one-fold coordinated hydrogen in the amorphous materials leading to increased network connectivity, and the nucleation and growth of turbostratic graphite (TG) and nanocrystalline SiC in the phase-separated materials. The net change in the resistance to fracture in these materials was effected by the change in the average fracture surface energy and crack deflection toughening. Crack deflection observed even in the amorphous materials revealed the presence of structural and compositional inhomogeneities. To further understand the cause and effect of crack deflection in terms of crack tip damage mechanisms, roughness analysis of fracture surfaces was carried out using the fractal approach. The analysis revealed self-affine scaling up to a correlation length of around 50 nm and a self-affine roughness exponent (ζ) of 0.8 ± 0.1 in all the materials, the latter in agreement with the universal roughness exponent conjectured in literature. However, no correlation was observed between the observed roughness exponents and the fracture toughness of the corresponding materials. Examination of the crack opening near the crack tip by high resolution AFM imaging revealed no persistent damage cavities along the crack, concluding that the fracture in the investigated Si-C-N ceramics proceeded in a brittle manner in the resolvable length scales, at crack velocities employed in the present experiments. The deformation behavior of the present Si-C-N ceramics under contact loading conditions was investigated using spherical as well as sharp (Vickers and Berkovich) indentation experiments. The elastic moduli and nanoindentation hardness evaluated from the analysis of the nanoindentation load-displacement curves correlated well with the evolution of material resistance to elastic and plastic deformation, commensurate with the structural and microstructural evolution in the materials. Analysis of the elastic and plastic deformation work quantities derived from the load-unload cycle in the Berkovich nanoindentation enabled the discrimination of the different plastic deformation characteristics of the amorphous and phase segregated materials. The equi-proportional variation of elastic and plastic deformation in the amorphous Si-C-N materials identical to vitreous silica indicated the anomalous character of plastic deformation in these materials that induced appreciable strain hardening under progressive densification. This was manifested in the load-dependant increase in hardness. The contrasting variation of plastic deformation work in the phase-separated materials indicated the emergence of an additional plastic deformation mechanism in these materials, that proceeded by a shear deformation promoted by the TG-phase. The anomalous densification behavior in amorphous Si-C-N materials also led to a load dependence of the strain rate sensitivity (m), also observed in vitreous silica, and controlled the evolution of indentation size effect (ISE). The magnitude and direction of ISE was determined by the relative dominance of the two concurrent effects, namely strain hardening and indentation creep deformation. The evolution of strain rate sensitivity in the range of investigated materials showed good agreement with the cluster model, which relates the increase in the number density of isolated regions in the microstructure to a corresponding increase in m. The non-densifying shear mode of plastic deformation in phase-separated materials led to a decrease in the strain hardening capability, increase in m and increased vulnerability to ISE.Item Open Access Atom probe reconstruction with a locally varying tip shape(2019) Beinke, Daniel; Schmitz, Guido (Prof. Dr. Dr. h.c.)In this thesis, a new approach for the reconstruction of data taken from an atom probe tomography experiment is presented. The goal of the study is to develop an algorithm, which is able to overcome well-known drawbacks of the conventional reconstruction technique, mainly caused by local magnification effects. At the same time, the algorithm should be easy to use and also fast enough, so that it might be routinely used as an improved alternative to the established reconstruction technique. The idea is based on the already existing possibility to simulate an entire atom probe experiment on a realistic length. Since the successive calculation of ion trajectories starting at the emitter surface and hitting the detector after a flight of a few centimeters can be realized, the concept is designed to invert the field evaporation process by making use of this trajectory calculation. To this end, the detected emitter volume needs to be rebuilt from the bottom to the top, which is an important difference compared to the conventional technique. In a first test, this inversion of the simulated experiment is demonstrated for a few prominent example cases. The decisive criterion for the positioning of an atom at a specific lattice site on the current emitter surface is the accordance of the impact position of the corresponding calculated trajectory with the measured coordinates on the detector. For every possible surface position, first an ion trajectory is calculated and its detector impact position is compared to the measured impact position. Finally, the best-matching trajectory defines the reconstruction coordinates. The approach is performed for some prominent example emitter structures with strongly varying evaporation fields of the involved material, which is known for causing tremendous artifacts in the reconstruction derived by the standard technique. In this first attempt, the algorithm is restricted to a rigid lattice, which means that detected atoms can only be positioned at sites belonging to the former lattice of the emitter. In a second step, the restriction to a rigid lattice is dropped. In this way, the reconstruction algorithm describes a more realistic scenario, since the exact lattice structure and its orientation might be unknown in the majority of experiments. The possibilities and limitations of the approach are discussed. It is found that an additional criterion for the determination of the reconstruction coordinates is needed in this case, since the algorithm is very sensitive to the misplacement of atoms. The stability can be significantly improved by the consideration of an inter-atomic potential, which acts as a filter that exclusively allows surface sites with a sufficiently high amount of neighbor atoms. For a perfect detector efficiency the algorithm yields promising results, but a decrease of the efficiency towards realistic values gives rise to artifacts. As a consequence of these numerical experiments, a new concept has been developed, which neglects the consideration of exact ion trajectories in order to make the algorithm more stable and fast. This third approach assumes rotational symmetry for the investigated emitter volume. An absolutely new characteristic of the technique is the capability to extract the shape of a field emitter directly from the observed pattern of ion impacts on the detector. This feature is a very important difference to the conventional technique, which assumes a constant spherical emitter shape. To the best of the authors knowledge, such a technique with this capability did not exist before. The promising features are demonstrated for several simulated but nevertheless realistic emitter structures. The improved quality of the reconstruction that can be achieved by the application of the here developed technique is shown by direct comparison to the result of the established reconstruction approach. The impressive benefits are illustrated for relevant emitter structures containing either precipitates or layers of different materials with strongly varying evaporation fields (44% or 56% relative variation). In addition, a simple modification of the technique is described, which yields homogenized atomic densities in the reconstructed volumes. Without this modification, the emitter surface is treated like a rigid curved plane, which is shifted upwards with every reconstructed atom during reconstruction. Once the surface is no longer considered to be rigid, individual parts can be lifted separately, yielding a significantly homogenized atomic density. Finally, the new concept of shape extraction is extended for the application to arbitrary emitter structures. The main idea of extracting the information about the emitter shape from the local density of measured events on the detector is maintained. In order to extend the approach to the application to structures without rotational symmetry, a relation between the local density of events on the detector and the Gaussian curvature on the emitter surface is derived. With the help of an iterative finite difference method, the Gaussian curvature at several positions on the tip surface is set. Consequently, a reasonable description of the emitter surface can be obtained and the reconstruction of an arbitrary data set can be performed. The concept is tested and discussed for a simulated example emitter structure.