Universität Stuttgart
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Item Open Access Influence of defects on the splitting of the acceptor ground state in silicon(1984) Ambrosy, Anton; Lassmann, Kurt; Goer, Anne M. de; Salce, Bernard; Zeile, Heinrich-Item Open Access Resonance and relaxation attenuation by neutral acceptors in a magnetic field(1977) Schad, Hanspeter; Lassmann, Kurt; Zeile, HeinrichFine structure, level splitting, and relaxation times of the acceptor ground state in cubic semiconductors can be deduced from ultrasonic attenuation. By the application of a magnetic field it is possible to vary the coupling strength and the number of acceptors on speaking terms with the ultrasonic wave. Making use of this possibility, we have determined directly effective coupling constants for relaxation attenuation and the temperature dependence of the critical intensity for saturation of the resonant interaction. Results obtained for p-type GaAs and Si are discussed in comparison with analogous results for glasses.Item Open Access Phonon absorption-spectroscopy in the presence of strong elastic phonon scattering(1986) Mebert, Joachim; Koblinger, Otto; Döttinger, Siegfried; Eisenmenger, WolfgangIn this work we show that in the presence of a strong phonon scattering background absorption structures can only be well resolved by reducing sample thickness to the phonon mean free path. This mean free path can be determined by analyzing the pulse shape of 285 GHz phonons. By reducing sample thickness to the appropriate value of 0,3mm the 21,2 cm -1 crystalline field transition in CaF 2:Er 3+ could be evaluated with the very high resolution of 5 GHz. In experiments performed on a 1mm thick LaF 3 Er 3+ sample we observed an absoption line at 14,2 cm -1 not visible in FIR absorption measurements.Item Open Access Shallow traps correlated with deep impurities in silicon as obtained by phonon induced conductance(1986) Burger, Wilfried; Lassmann, Kurt; Holm, Claus; Wagner, PeterAt low temperatures shallow neutral donors and acceptors in silicon can bind an extra carrier to form the so-called D- and A+ centers. With the method of phonon-induced electrical conductivity (PIC) we find the same threshold energies for the detachment of these carriers associated with the shallow impurities P and B, as have been obtained previously by FIR measurements. This shows that the detachment is by a one-phonon process. We find that there is no central cell correction for the binding to the deeper acceptors Al and Ga, whereas for In+ the binding energy is as large as 5,8 meV. We interprete this dependence on acceptor species as another example of the shallow-deep instability of the binding energy with the variation of the central cell potential.Item Open Access Electric-field profiles in corona- or electron-beam-charged and thermally treated Teflon PTFE, FEP, and PFA films(1992) Gerhard-Multhaupt, Reimund; Eberle, Gernot; Xia, Zhongfou; Yang, Guomao; Eisenmenger, WolfgangCharge spreading in three different types of Teflon electrets was studied by means of piezoelectrically generated pressure steps, FEP and PFA samples corona-charged at room temperature usually exhibited only a surface charge layer. Uniform charge spreading throughout the bulk was found in FEP charged at or heated to high temperatures. Charge spreading was much less prominent in PFA because of a smaller retrapping efficiency. In PTFE (polytetrafluorethylene), charges from the surface and the rear electrode were injected into the bulk during charging at any temperature. Electron-beam-deposited charge layers broadened significantly upon heating.Item Open Access Phonon scattering due to deep acceptors in semiconductors(1976) Combarieu, Andre de; Lassmann, KurtWe have measured the magnetothermal conductivity in GaAs(Mn) and Si(In) for temperatures between 1.4 K and 90 K at magnetic fields up to 8 T. In both cases the dopants are deep acceptors with binding energy much larger (110 meV and 165 meV respectively) than given by the effective mass theory (~ 35 meV). There is a double interest in such systems: First, an excited level 3 meV (4.2 meV) above the acceptor ground state has been concluded from ultrasonic measurements. Such an excited state might be connected with a Jahn-Teller effect of these deeper acceptors and should be seen by resonant phonon scattering in thermal conductivity. Second, an anomalous behavior of the magnetothermal conductivity has been found for shallowacceptors in Ge (but not in Si) making comparison with systems with different g-factors desirable. The g-factors of acceptors in GaAs are roughly three times, the g-factor of Si(In) about 0.6 times that of Si(B).Item Open Access Polarization profiles of electron-beam polarized VDF-TrFE copolymer films(1990) Schilling, Doris; Glatz-Reichenbach, Joachim; Dransfeld, Klaus; Bihler, Eckardt; Eisenmenger, WolfgangIn order to understand more clearly the poling mechanism in ferroelectric polymers, the PPS-technique was applied to copolymer films of vinylidenefluoride with trifluoroethylene P(VDF-TrFE), poled by a focused monoenergetic electron beam. Charges were injected in a well-defined way into the polymer films and thus provided information on the influence of externally introduced electrical charges on the poling process in ferroelectric polymers. The electron beam poling of P(VDF-TrFE) films is shown to produce very high values of polarization up to 180 mC/m2, which exceeds those produced in β-PVDF by electron irradiation by a factor of three. The distribution of the polarization across the film thickness is rather asymmetric, especially for samples irradiated with 20- and 30-KeV electrons. This may be caused by the rising electrical conductivity in samples with increasing electron energy. The annealing of the copolymer films before the poling procedure leads to a systematic increase of the polarization, with T a having its steepest rise around Tc.