Universität Stuttgart
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Item Open Access Influence of defects on the splitting of the acceptor ground state in silicon(1984) Ambrosy, Anton; Lassmann, Kurt; Goer, Anne M. de; Salce, Bernard; Zeile, Heinrich-Item Open Access Linear stark coupling to the ground state of effective mass acceptors(1989) Köpf, Andreas; Ambrosy, Anton; Lassmann, KurtIt is shown by dielectric resonance absorption at 24 GHz and by ultrasonic resonance spectroscopy between 5 and 10 GHz that linear coupling of the electric field to the ground state of effective mass acceptors in Si exists and has a distinct chemical shift from B to In.