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    Phono-conduction spectroscopy of shallow states in semiconductors
    (1990) Lassmann, Kurt; Gienger, Martin; Groß, Peter
    Phonoconduction spectroscopy of shallow states in semiconductors by help of superconduction Al-junctions as phonon sources with high spectral resolution is a sensitive new technique with phonon frequencies well up in the Debye range. The large k-vector of the phonons involved opens new possibilities for the investigation of electron dynamics and states in semiconductors.
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    One-phonon ionization of neutral donors in germanium
    (1989) Gienger, Martin; Groß, Peter; Lassmann, Kurt
    Here we show by phonon spectroscopy with superconducting tunnelling junctions that one-phonon excitations from the ground state to the conduction band (CB) are measurable as phonon induced conductivity (PIC) changes in the special case of donors in Ge. For the conductivity thresholds we find somewhat smaller binding energies than evaluated from optical measurements whereas for the 1s-singlet to 1s-triplet ground state splitting as seen by elastic phonon scattering we obtain the optical values.
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    Phonon spectroscopy of low energy vibrations of interstitial oxygen in germanium
    (1993) Lassmann, Kurt; Gienger, Martin; Glaser, Markus
    We can summarize our results as follows: Whereas the band of lowest lying mechanical states of interstitial oxygen in Si can be approximated by a two-dimensional oscillator perturbed by a central potential, the corresponding states in Ge can be well understood by a bindered rotator with a large central potential opposing a bending oscillation and with a sixfold modulation of the rotation due to the influence of the 6 neighbours to the Ge-O-Ge molecule
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    Depopulation effects in the phonoconduction response of A+ -states in silicon and germanium
    (1990) Groß, Peter; Gienger, Martin; Lassmann, Kurt
    We show here that deviations from these assumptions are effective in the experiment and responsible in particular for the observed illumination dependence of the phonoconduction signal. The phonon spectrum of an Al - STJ at bias V = eU > 2ΔAl consists of a continuum with a sharp threshold at Ώm = V - 2ΔAl. In the differentiated spectrum Ώm becomes the most prominent bias-tunable feature, namely the quasimonochromatic line of phonon spectroscopy used for the approximate analysis of sharp phonon scattering resonances such as the OI line of Fig. 1a (which shows inversion of the center due to strong scattering).