(1989) Köpf, Andreas; Ambrosy, Anton; Lassmann, Kurt
It is shown by dielectric resonance absorption at 24 GHz and by ultrasonic resonance spectroscopy between 5 and 10 GHz that linear coupling of the electric field to the ground state of effective mass acceptors in Si exists and has a distinct chemical shift from B to In.
(1989) Gienger, Martin; Groß, Peter; Lassmann, Kurt
Here we show by phonon spectroscopy with superconducting tunnelling junctions that one-phonon excitations from the ground state to the conduction band (CB) are measurable as phonon induced conductivity (PIC) changes in the special case of donors in Ge. For the conductivity thresholds we find somewhat smaller binding energies than evaluated from optical measurements whereas for the 1s-singlet to 1s-triplet ground state splitting as seen by elastic phonon scattering we obtain the optical values.
