Universität Stuttgart
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Item Open Access Experimental results on absolute phonon detection sensitivity of superconducting tunneling junctions(1972) Trumpp, Hans-Joachim; Epperlein, Peter W.; Lassmann, KurtSuperconducting tin tunnelling junctions are used for generating and detecting 300 GHz phonons. The absolute phonon detection sensitivity can be obtained, making possible a comparison of the number of phonons detected to the number of phonons generated. This, together with measurements of the dependence of junction time constant on its thickness, gives an indication that far more phonons are radiated into liquid He than is expected from a simple acoustic model.Item Open Access Quasiparticle recombination and 2Δ-phonon-trapping in superconducting tunnelling junctions(1976) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, RichardThe experimental recombination lifetime τeff of quasiparticles in superconducting films in general exceeds the intrinsic recombination lifetime τR by phonon trapping. On the basis of geometric acoustic propagation and reabsorption of phonons emitted in quasiparticle recombination, τeff is calculated as a function of film thickness d taking into account longitudinal and transverse phonon reabsorption, bulk loss processes and acoustical phonon transmission into the substrate. With increasing thickness d three characteristic ranges are found: range 1 with film thickness d small compared to the phonon reabsorption mean free path Λw, range 2 with d larger than Λw and dominating boundary losses, and range 3, also with d larger than Λw but with dominating bulk losses. For very small d the relation between τeff and τR, the intrinsic recombination lifetime, contains only the limiting angle of total reflection of phonons within the superconducting film. Therefore, τR can be directly obtained by τeff measurements and from the sound velocities of the film-substrate system. Range 2 is characterized by a linear dependence of τeff on d. In this range it is not possible to obtain τR from τeff measurements, however, τeff allows a determination of the phonon boundary transmission. Range 3 shows no thickness dependence of τeff on d in the limit of large d values. In this range a further method for obtaining τR from τeff values is suggested.Item Open Access Energy gap reduction in superconducting tin films by quasiparticle injection(1977) Fuchs, Jürgen; Epperlein, Peter W.; Welte, Michael; Eisenmenger, WolfgangIn Sn-/-Sn-/-Pb tunneling structures the energy gap ΔSn of Sn is reduced by quasiparticle injection via single-particle tunneling between the Sn films. ΔSn as function of the quasiparticle density is probed by the Pb contact and found in agreement with the theory of Owen and Scalapino. An instability of the energy gap of Sn is observed at the critical gap reduction ratio predicted by this theory for a first-order phase transition.Item Open Access Epitaxy and scanning tunneling microscopy image contrast of copper-phthalocyanine on graphite and MoS2(1994) Ludwig, Christoph; Strohmaier, Rainer; Petersen, Jörg; Gompf, Bruno; Eisenmenger, WolfgangMonolayers of copper–phthalocyanine (Cu–Pc) on highly oriented pyrolytic graphite (HOPG) and MoS2 prepared by organic molecular beam epitaxy have been investigated by scanning tunneling microscopy. On both substrates there exist well defined preparation conditions leading to ordered two-dimensional arrays of flat lying molecules. On HOPG they form a close-packed structure with a nearly quadratic unit cell, whereas on MoS2 we found two phases, one close-packed and one rowlike phase. This rowlike phase can be explained by a long range interaction due to an adsorbate induced superstructure of the substrate, which also can be seen in the scanning tunneling microscopy images. In images with submolecular resolution, the molecules appear different on the two substrates. On MoS2 they look like a four-leaved clover, on graphite they show a more detailed inner structure.Item Open Access Diffusive scattering of high-frequency phonons at free silicon surfaces(1983) Marx, Dieter; Eisenmenger, WolfgangComparing measurements of high-frequency phonon reflection at the uncovered and optically polished (100)-silicon surface, with calculations considering phonon focusing, reveal complete diffusive scattering with at most 4% specular reflection contribution. Two possible mechanisms causing diffusive scattering are discussed.Item Open Access Reflection of high-frequency phonons at silicon-solid interfaces(1981) Marx, Dieter; Eisenmenger, WolfgangIn reflection experiments with phonons of frequencies above 280 GHz propagating along (110) directions we observed large deviations from the acoustic mismatch theory for silicon-metal, silicon-condensed gas, and silicon-liquid helium interfaces.Item Open Access Polarization distributions in isotropic, stretched or annealed PVDF films(1989) Bihler, Eckardt; Holdik, Karl; Eisenmenger, WolfgangThe time development of the polarization distribution across the film thickness in polyvinylidene fluoride (PVDF) was observed using the pressure step response technique. The crystallite phase composition of the samples was changed by annealing and stretching at elevated temperatures. It is shown that the crystallite phase composition, e.g., the β crystallite content, determines the spatial distribution of the permanent polarization in PVDF.Item Open Access Tuning charge order in (TMTTF)2X by partial anion substitution(2021) Pustogow, Andrej; Dizdarevic, Daniel; Erfort, Sebastian; Iakutkina, Olga; Merkl, Valentino; Untereiner, Gabriele; Dressel, MartinIn the quasi-one-dimensional (TMTTF)2X compounds with effectively quarter-filled bands, electronic charge order is stabilized from the delicate interplay of Coulomb repulsion and electronic bandwidth. The correlation strength is commonly tuned by physical pressure or chemical substitution with stoichiometric ratios of anions and cations. Here, we investigate the charge-ordered state through partial substitution of the anions in (TMTTF)2[AsF6]1-x[SbF6]x with x≈0.3, determined from the intensity of infrared vibrations, which is sufficient to suppress the spin-Peierls state. Our dc transport experiments reveal a transition temperature TCO = 120 K and charge gap ΔCO=430 K between the values of the two parent compounds (TMTTF)2AsF6 and (TMTTF)2SbF6. Upon plotting the two parameters for different (TMTTF)2X, we find a universal relationship between TCO and ΔCO yielding that the energy gap vanishes for transition temperatures TCO≤60 K. While these quantities indicate that the macroscopic correlation strength is continuously tuned, our vibrational spectroscopy results probing the local charge disproportionation suggest that 2δ is modulated on a microscopic level.Item Open Access A study of the ground state of acceptors in silicon from thermal transport experiments(1981) Goer, Anne M. de; Locatelli, Marcel; Lassmann, KurtThermal conductivity measurements of silicon crystals doped with Bor In have shown the presence of several phonon scattering processes. The resonant effect observed below 1 K is ascribed to the existence of a distribution of splittings N(δ) of the Γ8 ground state of the acceptor, which could be related to the presence of oxygen and carbon impurities. In two cases, the maximum of N(δ) occurs for δ max near 6 GHz, in agreement with previous ultrasonic studies.Item Open Access Electric field-induced gas emission from PVDF films(1987) Bihler, Eckardt; Holdik, Karl; Eisenmenger, WolfgangCharge injection, conduction and trapping are important processes for stabilizing the electric polarization in the piezoelectric polymer PVDF. In order to study the nature of the pertinent charges in PVDF we measured the gas emission from PVDF using a permeable electrode under an applied electric field up to 0.7 MV/ cm. The films were covered on one side with evaporated copper, on the other side a copper wire gauze was used as a permeable electrode. The polymer films were mounted in an UHV-system with a built-in quadrupole mass spectrometer for residual gas analysis. Charging the permeable electrode negatively, gas emission was found mainly consisting of hydrogen, hydrogen fluoride, and fluorine. For comparison FEP-and PET-films were examined.