Universität Stuttgart
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Item Open Access Quasiparticle recombination and 2Δ-phonon-trapping in superconducting tunnelling junctions(1976) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, RichardThe experimental recombination lifetime τeff of quasiparticles in superconducting films in general exceeds the intrinsic recombination lifetime τR by phonon trapping. On the basis of geometric acoustic propagation and reabsorption of phonons emitted in quasiparticle recombination, τeff is calculated as a function of film thickness d taking into account longitudinal and transverse phonon reabsorption, bulk loss processes and acoustical phonon transmission into the substrate. With increasing thickness d three characteristic ranges are found: range 1 with film thickness d small compared to the phonon reabsorption mean free path Λw, range 2 with d larger than Λw and dominating boundary losses, and range 3, also with d larger than Λw but with dominating bulk losses. For very small d the relation between τeff and τR, the intrinsic recombination lifetime, contains only the limiting angle of total reflection of phonons within the superconducting film. Therefore, τR can be directly obtained by τeff measurements and from the sound velocities of the film-substrate system. Range 2 is characterized by a linear dependence of τeff on d. In this range it is not possible to obtain τR from τeff measurements, however, τeff allows a determination of the phonon boundary transmission. Range 3 shows no thickness dependence of τeff on d in the limit of large d values. In this range a further method for obtaining τR from τeff values is suggested.Item Open Access Reflection of high frequency phonons at free silicon surfaces(1978) Marx, Dieter; Buck, Jochen; Lassmann, Kurt; Eisenmenger, WolfgangIn reflection experiments at free silicon [100]-surfaces we could distinguish between specularly and diffusely reflected transverse phonons propagated along <100>-directions. With increasing phonon frequency the number of diffusely scattered phonons increase relative to that of specularly reflected phonons.Item Open Access Effective quasiparticle recombination times and electronic density of states at the Fermi level in superconducting films(1978) Epperlein, Peter W.; Lassmann, Kurt; Eisenmenger, Wolfgang-Item Open Access Intrinsic and experimental quasiparticle recombination times in superconducting films(1977) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, RichardExperimental quasiparticle recombination lifetime data for superconducting Al, Sn, and Pb films are compared with calculations based on a ray acoustic model taking account of the film thickness dependence of the reabsorption of recombination phonons. Information on the true or intrinsic quasiparticle recombination lifetime obtained from these and other data is discussed.Item Open Access Resonance and relaxation attenuation by neutral acceptors in a magnetic field(1977) Schad, Hanspeter; Lassmann, Kurt; Zeile, HeinrichFine structure, level splitting, and relaxation times of the acceptor ground state in cubic semiconductors can be deduced from ultrasonic attenuation. By the application of a magnetic field it is possible to vary the coupling strength and the number of acceptors on speaking terms with the ultrasonic wave. Making use of this possibility, we have determined directly effective coupling constants for relaxation attenuation and the temperature dependence of the critical intensity for saturation of the resonant interaction. Results obtained for p-type GaAs and Si are discussed in comparison with analogous results for glasses.Item Open Access Anisotropy of phonon emission from hot electrons in germanium(1976) Reupert, Wolfram; Lassmann, Kurt; Groot, Peter deWe have measured quantitatively the anisotropy of the electron-acoustical phonon scattering in n-germanium in five directions of the (lTO) plane utilizing tunneling junctions for calibrated detection of the phonon radiation emitted from a small avalanche breakdown region in the germanium surface. For comparison and evaluation of phonon focusing a constantan heater and a tunneling junction were also used as phonon sources. A similar experiment has been reported by A. Zylbersztejn, but he could only compare the ratio of the amplitudes of longitudinal and transverse phonon pulses in a given crystal direction to the calculation.Item Open Access Ultrasonic spectroscopy in p-type silicon(1979) Zeile, Heinrich; Mathuni, Otto; Lassmann, KurtFrom ultrasonic resonant absorption over a wide frequency range we have determined the distribution of the energy splittings of the acceptor ground state in very pure Si(B) crystals. The measured distributions with maxima of the order of 10μeV fit well to the expected electric field distribution from the~ 10 12 cm-3 residual donors. The critical intensity for saturating the resonance attenuation has been measured in crystals of various acceptor concentrations and as a function of temperature. Although the average distance of acceptor atoms is much greater than the Bohr-radius of the bound defect-electrons, relaxation times are found to be shortened by the acceptor-acceptor interaction.Item Open Access Ultrasonic attenuation due to the neutral acceptor indium in silicon(1976) Schad, Hanspeter; Lassmann, Kurt-Item Open Access Phonon scattering due to deep acceptors in semiconductors(1976) Combarieu, Andre de; Lassmann, KurtWe have measured the magnetothermal conductivity in GaAs(Mn) and Si(In) for temperatures between 1.4 K and 90 K at magnetic fields up to 8 T. In both cases the dopants are deep acceptors with binding energy much larger (110 meV and 165 meV respectively) than given by the effective mass theory (~ 35 meV). There is a double interest in such systems: First, an excited level 3 meV (4.2 meV) above the acceptor ground state has been concluded from ultrasonic measurements. Such an excited state might be connected with a Jahn-Teller effect of these deeper acceptors and should be seen by resonant phonon scattering in thermal conductivity. Second, an anomalous behavior of the magnetothermal conductivity has been found for shallowacceptors in Ge (but not in Si) making comparison with systems with different g-factors desirable. The g-factors of acceptors in GaAs are roughly three times, the g-factor of Si(In) about 0.6 times that of Si(B).Item Open Access Quasiparticle recombination time in superconducting tin and normal electronic density of states at the Fermi surface from tunnel junction experiments(1978) Epperlein, Peter W.; Lassmann, Kurt; Eisenmenger, WolfgangWe have measured the temperature dependence of the effective quasiparticle recombination time in superconducting tin tunnel junctions by current and laser pulse excitation. The experimental times show satisfactory agreement with calculations based on the ray acoustic lifetime model of Eisenmenger et al. taking into account the film thickness dependence of the phonon reabsorption, 2Delta-phonon volume loss processes and phonon transmission from the junction into the substrate and liquid helium. On the basis of the BCS density of thermally excited quasiparticles and simplified rate equations for quasiparticle recombination, and from the analysis of measurements of decaying excess quasiparticle concentrations we obtain a mean valueN 0=(2.73±0.03) 1022 eV-1 cm-3 for the electronic density of states at the Fermi Surface in thin, evaporated tin films. This value differs less than 5% from that obtained from the experimental electronic heat-capacity coefficient of the bulk material.