Universität Stuttgart
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Item Open Access Influence of defects on the splitting of the acceptor ground state in silicon(1984) Ambrosy, Anton; Lassmann, Kurt; Goer, Anne M. de; Salce, Bernard; Zeile, Heinrich-Item Open Access Piezo and pyroelectricity in electrets : caused by charges, dipoles, or both?(1992) Sessler, Gerhard M.; Das-Gupta, Dilip K.; deReggi, Aimé S.; Eisenmenger, Wolfgang; Furukawa, Takeo; Giacometti, José A.; Gerhard-Multhaupt, ReimundIn a homogeneous medium space charges cannot cause piezo or pyroeiectricity. If stressed, there will be affine geometrical changes throughout the medium, and therefore the induction charges on the electrodes will remain the same, and piezoelectricity cannot be generated. However, if dipoles are present in such a homogeneous dielectric, then piezoelectricity is possible. In an inhomogeneous medium such as a semicrystalline polymer, charges and dipoles can cause piezoelectricity. If you have, for instance, a semicrystalline polymer then the crystalline and the amorphous parts are, upon compression, subjected to different degrees of deformation; and for this reason, a piezoelectric effect can be generated.Item Open Access Resonance and relaxation attenuation by neutral acceptors in a magnetic field(1977) Schad, Hanspeter; Lassmann, Kurt; Zeile, HeinrichFine structure, level splitting, and relaxation times of the acceptor ground state in cubic semiconductors can be deduced from ultrasonic attenuation. By the application of a magnetic field it is possible to vary the coupling strength and the number of acceptors on speaking terms with the ultrasonic wave. Making use of this possibility, we have determined directly effective coupling constants for relaxation attenuation and the temperature dependence of the critical intensity for saturation of the resonant interaction. Results obtained for p-type GaAs and Si are discussed in comparison with analogous results for glasses.Item Open Access Phonon absorption-spectroscopy in the presence of strong elastic phonon scattering(1986) Mebert, Joachim; Koblinger, Otto; Döttinger, Siegfried; Eisenmenger, WolfgangIn this work we show that in the presence of a strong phonon scattering background absorption structures can only be well resolved by reducing sample thickness to the phonon mean free path. This mean free path can be determined by analyzing the pulse shape of 285 GHz phonons. By reducing sample thickness to the appropriate value of 0,3mm the 21,2 cm -1 crystalline field transition in CaF 2:Er 3+ could be evaluated with the very high resolution of 5 GHz. In experiments performed on a 1mm thick LaF 3 Er 3+ sample we observed an absoption line at 14,2 cm -1 not visible in FIR absorption measurements.Item Open Access A study of the ground state of acceptors in silicon from thermal transport experiments(1981) Goer, Anne M. de; Locatelli, Marcel; Lassmann, KurtThermal conductivity measurements of silicon crystals doped with Bor In have shown the presence of several phonon scattering processes. The resonant effect observed below 1 K is ascribed to the existence of a distribution of splittings N(δ) of the Γ8 ground state of the acceptor, which could be related to the presence of oxygen and carbon impurities. In two cases, the maximum of N(δ) occurs for δ max near 6 GHz, in agreement with previous ultrasonic studies.Item Open Access Down-conversion of high-frequency acoustic phonons(1987) Galkina, Tatjana I.; Blinov, A. Y.; Bonch-Osmolovskii, M. M.; Koblinger, Otto; Lassmann, Kurt; Eisenmenger, WolfgangMeasurements of phonon transport in amorphous media can give valuable information on the structural properties of these materials and may be of practical interest for its own concerning the question of thermalization in electronic devices. The existence of two-level systems in a-Si:H as one of these technically important materials has been concluded from measurements of dispersion and attenuation of acoustic surface waves.Item Open Access Shallow traps correlated with deep impurities in silicon as obtained by phonon induced conductance(1986) Burger, Wilfried; Lassmann, Kurt; Holm, Claus; Wagner, PeterAt low temperatures shallow neutral donors and acceptors in silicon can bind an extra carrier to form the so-called D- and A+ centers. With the method of phonon-induced electrical conductivity (PIC) we find the same threshold energies for the detachment of these carriers associated with the shallow impurities P and B, as have been obtained previously by FIR measurements. This shows that the detachment is by a one-phonon process. We find that there is no central cell correction for the binding to the deeper acceptors Al and Ga, whereas for In+ the binding energy is as large as 5,8 meV. We interprete this dependence on acceptor species as another example of the shallow-deep instability of the binding energy with the variation of the central cell potential.Item Open Access Phonon spectroscopy of defects correlated with the diffusion of Zn into Si(1994) Staiger, Joachim; Groß, Peter; Lassmann, Kurt; Bracht, Hartmut; Stolwijk, Nicolaas A.We analyse by phonon spectroscopy low lying phonon scattering states from defects that are introduced by the diffusion of Zn into thick Si wafers.Item Open Access Electric-field profiles in corona- or electron-beam-charged and thermally treated Teflon PTFE, FEP, and PFA films(1992) Gerhard-Multhaupt, Reimund; Eberle, Gernot; Xia, Zhongfou; Yang, Guomao; Eisenmenger, WolfgangCharge spreading in three different types of Teflon electrets was studied by means of piezoelectrically generated pressure steps, FEP and PFA samples corona-charged at room temperature usually exhibited only a surface charge layer. Uniform charge spreading throughout the bulk was found in FEP charged at or heated to high temperatures. Charge spreading was much less prominent in PFA because of a smaller retrapping efficiency. In PTFE (polytetrafluorethylene), charges from the surface and the rear electrode were injected into the bulk during charging at any temperature. Electron-beam-deposited charge layers broadened significantly upon heating.Item Open Access Polarization profiles of polyvinylidene fluoride films polarized by a focused electron beam(1989) Schilling, Doris; Dransfeld, Klaus; Bihler, Eckardt; Holdik, Karl; Eisenmenger, WolfgangThe depth profiles of the polarization in films of polyvinylidene fluoride (PVDF) as well as in vinylidene‐fluoride–trifluoroethylene (VDF‐TrFE) copolymer films polarized by a focused electron beam were investigated using the piezoelectrically generated pressure step method. The dominant polarization exhibits a broad maximum inside the film. The position of this maximum depends not only on the energy of the incident electrons but also on the material parameters of the sample. Close to the surface exposed to the electron beam we have in addition observed a small secondary maximum of opposite polarization (amounting to about 1 mC/m2). A qualitative model is presented for the poling of films of PVDF and its copolymers with TrFE by focused electron beam accounting for most of the observed features. The application of electron beams for the poling of ferroelectric films allows the production of piezoelectric bimorphs. By using a well‐focused electron beam also ferroelectric domains of very small lateral dimensions can be created which could become important for ferroelectric data storage.