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    Energy gap reduction in superconducting tin films by quasiparticle injection
    (1977) Fuchs, Jürgen; Epperlein, Peter W.; Welte, Michael; Eisenmenger, Wolfgang
    In Sn-/-Sn-/-Pb tunneling structures the energy gap ΔSn of Sn is reduced by quasiparticle injection via single-particle tunneling between the Sn films. ΔSn as function of the quasiparticle density is probed by the Pb contact and found in agreement with the theory of Owen and Scalapino. An instability of the energy gap of Sn is observed at the critical gap reduction ratio predicted by this theory for a first-order phase transition.
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    Quasiparticle recombination and 2Δ-phonon-trapping in superconducting tunnelling junctions
    (1976) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, Richard
    The experimental recombination lifetime τeff of quasiparticles in superconducting films in general exceeds the intrinsic recombination lifetime τR by phonon trapping. On the basis of geometric acoustic propagation and reabsorption of phonons emitted in quasiparticle recombination, τeff is calculated as a function of film thickness d taking into account longitudinal and transverse phonon reabsorption, bulk loss processes and acoustical phonon transmission into the substrate. With increasing thickness d three characteristic ranges are found: range 1 with film thickness d small compared to the phonon reabsorption mean free path Λw, range 2 with d larger than Λw and dominating boundary losses, and range 3, also with d larger than Λw but with dominating bulk losses. For very small d the relation between τeff and τR, the intrinsic recombination lifetime, contains only the limiting angle of total reflection of phonons within the superconducting film. Therefore, τR can be directly obtained by τeff measurements and from the sound velocities of the film-substrate system. Range 2 is characterized by a linear dependence of τeff on d. In this range it is not possible to obtain τR from τeff measurements, however, τeff allows a determination of the phonon boundary transmission. Range 3 shows no thickness dependence of τeff on d in the limit of large d values. In this range a further method for obtaining τR from τeff values is suggested.
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    Reflection of high frequency phonons at free silicon surfaces
    (1978) Marx, Dieter; Buck, Jochen; Lassmann, Kurt; Eisenmenger, Wolfgang
    In reflection experiments at free silicon [100]-surfaces we could distinguish between specularly and diffusely reflected transverse phonons propagated along <100>-directions. With increasing phonon frequency the number of diffusely scattered phonons increase relative to that of specularly reflected phonons.
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    Effective quasiparticle recombination times and electronic density of states at the Fermi level in superconducting films
    (1978) Epperlein, Peter W.; Lassmann, Kurt; Eisenmenger, Wolfgang
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    Intrinsic and experimental quasiparticle recombination times in superconducting films
    (1977) Eisenmenger, Wolfgang; Lassmann, Kurt; Trumpp, Hans-Joachim; Krauß, Richard
    Experimental quasiparticle recombination lifetime data for superconducting Al, Sn, and Pb films are compared with calculations based on a ray acoustic model taking account of the film thickness dependence of the reabsorption of recombination phonons. Information on the true or intrinsic quasiparticle recombination lifetime obtained from these and other data is discussed.
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    Emission, absorption and propagation of acoustic THz-waves in solids
    (1979) Eisenmenger, Wolfgang
    Recent experimental developments in generation and detection of THz acoustical phonons have led to studies of phonon emission, propagation and absorption in solids. New results of this acoustical phonon spectroscopy concern phonon interactions with collective excitations (phonons, photons, magnons), localized excitations (resonant scattering of impurities, radiationless transitions) and electronic excitations in metals, superconductors and semiconductors. The different experimental methods and their applications to phonon interaction studies are discussed.
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    Analysis of the acoustlc transients in the pulse response of the linear electro-optic effect
    (1976) Veeser, Hermann; Bogner, Udo; Eisenmenger, Wolfgang
    The pulse response of the linear electro-optic effect is investigated with high temporal and spatial resolution in KDP, KD*P, and biaxial LiCOOH · H2O. Experimental results, which are explained theoretically, show that the piezo-optic transients induced by the piezoelectric effect, are generated by stress release waves. Starting from the surfaces, these excite by reflection, diffraction, and superposition, due to the finite crystal dimensions, normal vibration modes too. It is shown that the direct electro-optic effect can be measured for all crystal classes at the beginning of the pulse response. The pulse method also yields static electro-optic, piezo-optic, and elastic constants. The values of r63, r63, p66 and c66 measured in KDP, agree well with those of other authors. Measurement of the direct electro-optic effect of LiCOOH · H2O in some directions yields values within 1 to 4 × 10-12 m/V.
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    High frequency phonon emission from superconducting Al-tunnelling junctions
    (1976) Eisenmenger, Wolfgang
    In single particle tunneling between identical superconductors phonons are generated by relaxation - and recombination transitions of injected quasiparticles. Phonon detection is mediated by the breaking of Cooper-pairs by phonons with energy exceeding the superconducting energy gap 2Δ D. This leads to an increase of the quasiparticle population and a corresponding contribution to the tunneling current in the thermal tunneling regime 0
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    Superconducting tunnelling junctions as phonon generators and detectors
    (1976) Eisenmenger, Wolfgang
    It is the aim of this chapter to review the experimental and theoretical results obtained by the use of superconducting tunneling junctions as phonon generators and detectors. We first discuss the fundamental processes and their experimental evidence in more qualitative terms in Sections II and III. The quantitative treatment of phonon detection and generation is given in Sections IV and V, while Section VI discusses phonon spectroscopy and other applications.
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    Sources of loss processes in phonon generation and detection experiments with superconducting tunneling junctions
    (1977) Trumpp, Hans-Joachim; Eisenmenger, Wolfgang
    Observing the phonon yield, i.e. the ratio of the experimental phonon signal amplitude and the corresponding calculated value, phonon losses within the generation-detection system can be localized and determined quantitatively. With tin junctions on pure silicon substrates immersed in liquid helium the phonon yield is 3–5%. Under vacuum conditions the yield rises to 10–12% indicating strong phonon transmission to the helium bath. The experimental lifetime for 280 GHz phonons in the silicon substrate is longer than 65 µs indicating negligible volume losses and losses at the free substrate surface. It is further shown, that volume losses inside the phonon generator and detector are small compared to the total loss of about 90%. By phonon reverberation measurements we find evidence that the main sources for phonon losses are localized at the boundaries of the tunneling junctions to the substrate. This is supported by an increase of the phonon yield with improved polishing from about 9% (mechanical), 10% (chemical) to 12% (sputter etching). A SIMS analysis indicates the presence of carbonhydrates and probably of water in the boundaries. This layer of extraneous molecules together with the nonideal surface structure of the substrate and the evaporated films weakens the mechanical bonding between the tunnel junctions and the substrate and is possibly causing strong phonon splitting by anharmonic forces.