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Subject: search.filters.subject.530Institute: search.filters.UBSInstitut.Institut für MaterialwissenschaftInstitute: search.filters.UBSInstitut.Max-Planck-Institut für FestkörperforschungInstitute: search.filters.UBSInstitut.Fakultätsübergreifend / Sonstige Einrichtung

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    ItemOpen Access
    Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
    (2021) Geiger, Michael; Hagel, Marion; Reindl, Thomas; Weis, Jürgen; Weitz, R. Thomas; Solodenko, Helena; Schmitz, Guido; Zschieschang, Ute; Klauk, Hagen; Acharya, Rachana
    A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current–voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.
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    ItemOpen Access
    Synthesis and optical properties of single‐crystalline phosphors Gd3In2Ga3O12:RE3+ (RE = Nd3+ and Ho3+) grown via the optical float zone method
    (2025) Yilmaz, Hasan; Kinik, Gülsüm; Isobe, Masahiko; Puphal, Pascal; Suta, Markus; Clemens, Oliver
    The continuous development of innovative optical materials with lanthanoid ions as activators has emerged as a modern sector of materials chemistry. The experience with the fabrication of single crystals with the optical float zone has motivated one to investigate the luminescence of Nd3+ and Ho3+ ions in the garnets (Gd3−xREx)In2Ga3O12 (RE = Nd and Ho, x = 0; 0.15–0.30). Upon usage of an Ar/O2 (80:20 ratio) atmosphere and application of an auxiliary pressure (6 bar) to suppress In2O3 evaporation, single‐crystalline domain sizes in the order of ≈6 × 6 × 1 mm3 are obtained. Structural analysis confirms the formation of a cubic garnet phase with space group Ia3¯d, with the substituents incorporated in accordance with Vegard's law. Backscattered electron imaging and energy‐dispersive X‐ray spectroscopy are conducted, demonstrating a homogeneous elemental distribution within the crystals. Photoluminescence studies are carried out, revealing the characteristic narrow‐line 4fn → 4fn transitions of Nd3+ and Ho3+, with decay times in the submillisecond range, suggesting non‐negligible cross‐relaxation effects are present. Despite this, the large nearest‐neighbor Gd-Gd distance (3.88 Å) in Gd3In2Ga3O12 and the low phonon cutoff energy (≈700 cm-1) are found to limit cross‐relaxation pathways, preserving significant photoluminescence brightness. These results highlight the potential of Gd3In2Ga3O12:RE3+ single crystals as promising candidates for advanced optical applications.