Universität Stuttgart

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Subject: search.filters.subject.530Institute: search.filters.UBSInstitut.Sonstige EinrichtungInstitute: search.filters.UBSInstitut.1. Physikalisches InstitutStart date: 1990End date: 1994

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Now showing 1 - 5 of 5
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    Piezo and pyroelectricity in electrets : caused by charges, dipoles, or both?
    (1992) Sessler, Gerhard M.; Das-Gupta, Dilip K.; deReggi, Aimé S.; Eisenmenger, Wolfgang; Furukawa, Takeo; Giacometti, José A.; Gerhard-Multhaupt, Reimund
    In a homogeneous medium space charges cannot cause piezo or pyroeiectricity. If stressed, there will be affine geometrical changes throughout the medium, and therefore the induction charges on the electrodes will remain the same, and piezoelectricity cannot be generated. However, if dipoles are present in such a homogeneous dielectric, then piezoelectricity is possible. In an inhomogeneous medium such as a semicrystalline polymer, charges and dipoles can cause piezoelectricity. If you have, for instance, a semicrystalline polymer then the crystalline and the amorphous parts are, upon compression, subjected to different degrees of deformation; and for this reason, a piezoelectric effect can be generated.
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    Phonon spectroscopy of defects correlated with the diffusion of Zn into Si
    (1994) Staiger, Joachim; Groß, Peter; Lassmann, Kurt; Bracht, Hartmut; Stolwijk, Nicolaas A.
    We analyse by phonon spectroscopy low lying phonon scattering states from defects that are introduced by the diffusion of Zn into thick Si wafers.
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    Electric-field profiles in corona- or electron-beam-charged and thermally treated Teflon PTFE, FEP, and PFA films
    (1992) Gerhard-Multhaupt, Reimund; Eberle, Gernot; Xia, Zhongfou; Yang, Guomao; Eisenmenger, Wolfgang
    Charge spreading in three different types of Teflon electrets was studied by means of piezoelectrically generated pressure steps, FEP and PFA samples corona-charged at room temperature usually exhibited only a surface charge layer. Uniform charge spreading throughout the bulk was found in FEP charged at or heated to high temperatures. Charge spreading was much less prominent in PFA because of a smaller retrapping efficiency. In PTFE (polytetrafluorethylene), charges from the surface and the rear electrode were injected into the bulk during charging at any temperature. Electron-beam-deposited charge layers broadened significantly upon heating.
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    Polarization profiles of electron-beam polarized VDF-TrFE copolymer films
    (1990) Schilling, Doris; Glatz-Reichenbach, Joachim; Dransfeld, Klaus; Bihler, Eckardt; Eisenmenger, Wolfgang
    In order to understand more clearly the poling mechanism in ferroelectric polymers, the PPS-technique was applied to copolymer films of vinylidenefluoride with trifluoroethylene P(VDF-TrFE), poled by a focused monoenergetic electron beam. Charges were injected in a well-defined way into the polymer films and thus provided information on the influence of externally introduced electrical charges on the poling process in ferroelectric polymers. The electron beam poling of P(VDF-TrFE) films is shown to produce very high values of polarization up to 180 mC/m2, which exceeds those produced in β-PVDF by electron irradiation by a factor of three. The distribution of the polarization across the film thickness is rather asymmetric, especially for samples irradiated with 20- and 30-KeV electrons. This may be caused by the rising electrical conductivity in samples with increasing electron energy. The annealing of the copolymer films before the poling procedure leads to a systematic increase of the polarization, with T a having its steepest rise around Tc.
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    Phonon spectroscopy measurements at amorphous films
    (1994) Mebert, Joachim; Eisenmenger, Wolfgang
    Phonon spectroscopy measurements were used to examine the scattering of high frequency phonons (300 GHz-1 THz) in amorphous materials. The experiments were done with the use of time and frequency resolved measurements of the phonon transmission behaviour through amorphous single films of different thicknesses. The typical film thicknesses were of the order of 10 nm. In contrast to the pure amorphous semiconductors Si and Ge our experiments show inelastic phonon scattering processes in the case of SiO 2 and Si:H. This inelastic phonon scattering also occurs when the pure semiconductors Si and Ge are prepared in an O 2 or H 2 atmosphere, but is missing when the preparation process is done in an N 2 atmosphere. In films of the pure semiconductors a-Si and a-Ge we only found evidence to elastic scattering processes. In further experiments at heated a-Si:H samples we could examine the atomical bonded hydrogen to be the center of the inelastic phonon scattering.