Universität Stuttgart
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Item Open Access Influence of defects on the splitting of the acceptor ground state in silicon(1984) Ambrosy, Anton; Lassmann, Kurt; Goer, Anne M. de; Salce, Bernard; Zeile, Heinrich-Item Open Access Ultrasonic spectroscopy of the acceptor ground state in cubic semiconductors(1980) Lassmann, Kurt; Zeile, HeinrichIn the following we will discuss ultrasonic measurements on p-type semiconductors reflecting spontaneous and defect sensitive modifications of the acceptor ground state.