Universität Stuttgart
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Item Open Access Resonance and relaxation attenuation by neutral acceptors in a magnetic field(1977) Schad, Hanspeter; Lassmann, Kurt; Zeile, HeinrichFine structure, level splitting, and relaxation times of the acceptor ground state in cubic semiconductors can be deduced from ultrasonic attenuation. By the application of a magnetic field it is possible to vary the coupling strength and the number of acceptors on speaking terms with the ultrasonic wave. Making use of this possibility, we have determined directly effective coupling constants for relaxation attenuation and the temperature dependence of the critical intensity for saturation of the resonant interaction. Results obtained for p-type GaAs and Si are discussed in comparison with analogous results for glasses.Item Open Access Ultrasonic attenuation due to the neutral acceptor Mn in GaAs(1976) Lassmann, Kurt; Schad, HanspeterWe report on measurements of the ultrasonic attenuation in GaAs: Mn at frequencies between 400 and 2000 MHz and at temperatures between 1 and 35 K. The results indicate that there is a level 3 meV above the acceptor round state.Item Open Access Ultrasonic attenuation due to resonant interaction with a distribution of level splittings of the ground state of shallow acceptors in Ge(1976) Ortlieb, Erhard; Schad, Hanspeter; Lassmann, KurtThe ultrasonic attenuation in Ge (Ga, In) has been measured in the frequency range from 500 MHz to 2.5 GHz, and from room temperature down to 1 K. Below 10 K the attenuation rises as ω2/T. For the first time saturation of the attenuation has been observed for ground state of a shallow acceptor. These results can be interpreted as due to resonance interaction with level splittings of a broad distribution with width of about 0.1 meV.Item Open Access Ultrasonic attenuation due to the neutral acceptor indium in silicon(1976) Schad, Hanspeter; Lassmann, Kurt-