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Subject: search.filters.subject.530Start date: 2020Author: search.filters.author.Michler, PeterAuthor: search.filters.author.Bauer, Stephanie

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    ItemOpen Access
    Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform
    (2022) Sittig, Robert; Nawrath, Cornelius; Kolatschek, Sascha; Bauer, Stephanie; Schaber, Richard; Huang, Jiasheng; Vijayan, Ponraj; Pruy, Pascal; Portalupi, Simone Luca; Jetter, Michael; Michler, Peter
    The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range centered at 1550 nm. However, the thickness of common MMB designs (>1 μm) limits their compatibility with most photonic resonator types. Here, we report on the metal–organic vapor-phase epitaxy (MOVPE) growth of a novel InGaAs MMB with a nonlinear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. This allows us to achieve the necessary transition of the lattice constant and to provide a smooth surface for QD growth within 180 nm. Single-photon emission at 1550 nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom nonclassical light sources as a key component of photonic quantum technologies.
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    High-rate intercity quantum key distribution with a semiconductor single-photon source
    (2024) Yang, Jingzhong; Jiang, Zenghui; Benthin, Frederik; Hanel, Joscha; Fandrich, Tom; Joos, Raphael; Bauer, Stephanie; Kolatschek, Sascha; Hreibi, Ali; Rugeramigabo, Eddy Patrick; Jetter, Michael; Portalupi, Simone Luca; Zopf, Michael; Michler, Peter; Kück, Stefan; Ding, Fei
    Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 × 10 -5 with an average quantum bit error ratio of ~ 0.65% are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications.