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dc.contributor.authorNitzsche, Maximilian-
dc.contributor.authorCheshire, Christoph-
dc.contributor.authorFischer, Manuel-
dc.contributor.authorRuthardt, Johannes-
dc.contributor.authorRoth-Stielow, Jörg-
dc.description.abstractThe investment which is necessary to replace Si IGBTs with SiC MOSFETs in medium to high power DC-AC inverters needs to be balanced carefully against the advantages SiC offers. This paper compares a 20 kW Si IGBT inverter with a 20 kW SiC MOSFET inverter. The power semiconductor components are operated identically in a modular half bridge module to ensure comparability. Thereby the measurement of the switching losses is explicitly not the focus but the overall efficiency while taking volume, current ripple, switching frequency and inductance into account. The limits of reasonable operating range shall be evaluated and an overview on the benefits of SiC on system level will be given.en
dc.titleComprehensive comparison of a SiC MOSFET and Si IGBT based inverteren
ubs.bemerkung.externWebsite der PCIM Europe: www.pcim-europe.comde
ubs.fakultaetInformatik, Elektrotechnik und Informationstechnikde
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.institutInstitut für Leistungselektronik und Elektrische Antriebede
ubs.institutFakultätsübergreifend / Sonstige Einrichtungde
ubs.konferenznamePCIM Europe, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (2019, Nürnberg)de
ubs.publikation.sourcePCIM Europe 2019 : proceedings. Berlin : VDE Verlag, 2019. - ISBN 978-3-8007-4938-6, S. 1828-1834de
Appears in Collections:05 Fakultät Informatik, Elektrotechnik und Informationstechnik

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