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Treffer Dokumente:
ErscheinungsdatumTitelAutor(en)
19918.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTsHurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199218 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTsWang, Zhigong; Nowotny, Ulrich; Berroth, Manfred; Bronner, Wolfgang; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
1991High-frequency equivalent circuit of GaAs FET's for large-signal applicationsBerroth, Manfred; Bosch, Roland
199216 x 16 bit parallel multiplier based on 6 K gate array with 0.3 μm AlGaAs/GaAs quantum well transistorsThiede, Andreas; Berroth, Manfred; Hurm, Volker; Nowotny, Ulrich; Seibel, Jörg; Gotzeina, W.; Sedler, Martin; Raynor, Brian; Köhler, Klaus; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Schneider, Joachim
199314 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiverHurm, Volker; Ludwig, Manfred; Rosenzweig, Josef; Benz, Willi; Berroth, Manfred; Bosch, Roland; Bronner, Wolfgang; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
1993Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- μm gate length quantum-well HEMT'sWang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Ludwig, Manfred; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199110 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTsHurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Axmann, Albert; Benz, Willi; Berroth, Manfred; Osorio, Ricardo; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
199111.6 Gbps 1:4 demultiplexer using double pulse doped quantum well GaAs/AlGaAs transistorsLang, Manfred; Nowotny, Ulrich; Berroth, Manfred
199120 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistorsNowotny, Ulrich; Lang, Manfred; Berroth, Manfred; Hurm, Volker; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim
1990Broad-band determination of the FET small-signal equivalent circuitBerroth, Manfred; Bosch, Roland

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