Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-6716
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dc.contributor.authorOrtlieb, Erhardde
dc.contributor.authorSchad, Hanspeterde
dc.contributor.authorLassmann, Kurtde
dc.date.accessioned2009-10-07de
dc.date.accessioned2016-03-31T10:32:27Z-
dc.date.available2009-10-07de
dc.date.available2016-03-31T10:32:27Z-
dc.date.issued1976de
dc.identifier.other317909304de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-46801de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/6733-
dc.identifier.urihttp://dx.doi.org/10.18419/opus-6716-
dc.description.abstractThe ultrasonic attenuation in Ge (Ga, In) has been measured in the frequency range from 500 MHz to 2.5 GHz, and from room temperature down to 1 K. Below 10 K the attenuation rises as ω2/T. For the first time saturation of the attenuation has been observed for ground state of a shallow acceptor. These results can be interpreted as due to resonance interaction with level splittings of a broad distribution with width of about 0.1 meV.en
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationDämpfung , Ultraschall , Akzeptor <Halbleiterphysik>de
dc.subject.ddc530de
dc.titleUltrasonic attenuation due to resonant interaction with a distribution of level splittings of the ground state of shallow acceptors in Geen
dc.typearticlede
ubs.fakultaetExterne wissenschaftliche Einrichtungende
ubs.institutMax-Planck-Institut für Festkörperforschungde
ubs.opusid4680de
ubs.publikation.sourceSolid State Communications 19 (1976), S. 599-601. URL http://dx.doi.org./10.1016/0038-1098(76)90076-4de
ubs.publikation.typZeitschriftenartikelde
Appears in Collections:14 Externe wissenschaftliche Einrichtungen

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