Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-7055
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dc.contributor.authorStaiger, Joachimde
dc.contributor.authorGroß, Peterde
dc.contributor.authorLassmann, Kurtde
dc.contributor.authorBracht, Hartmutde
dc.contributor.authorStolwijk, Nicolaas A.de
dc.date.accessioned2009-10-12de
dc.date.accessioned2016-03-31T11:41:48Z-
dc.date.available2009-10-12de
dc.date.available2016-03-31T11:41:48Z-
dc.date.issued1994de
dc.identifier.other318047063de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47272de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/7072-
dc.identifier.urihttp://dx.doi.org/10.18419/opus-7055-
dc.description.abstractWe analyse by phonon spectroscopy low lying phonon scattering states from defects that are introduced by the diffusion of Zn into thick Si wafers.en
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationPhononenspektroskopie , Phononenstreuung , Silicium , Gitterbaufehlerde
dc.subject.ddc530de
dc.titlePhonon spectroscopy of defects correlated with the diffusion of Zn into Sien
dc.typearticlede
dc.date.updated2014-09-11de
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.fakultaetFakultät Mathematik und Physikde
ubs.institutSonstige Einrichtungde
ubs.institut1. Physikalisches Institutde
ubs.opusid4727de
ubs.publikation.sourceMaterials science forum 143/147 (1994), S. 675-680. URL http://dx.doi.org./10.4028/www.scientific.net/MSF.143-147.675de
ubs.publikation.typZeitschriftenartikelde
Appears in Collections:15 Fakultätsübergreifend / Sonstige Einrichtung

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