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Authors: Hurm, Volker
Rosenzweig, Josef
Ludwig, Manfred
Benz, Willi
Osorio, Ricardo
Berroth, Manfred
Hülsmann, Axel
Kaufel, Gudrun
Köhler, Klaus
Raynor, Brian
Schneider, Joachim
Title: 10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
Issue Date: 1991 Zeitschriftenartikel IEEE transactions on electron devices 38 (1991), S. 2713. URL 10.1109/16.158744
Abstract: A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was fabricated using a 0.5-μm recessed-gate process for double delta-doped quantum-well HEMTs. The following mean values for the enhancement and depletion HEMT parameters, respectively, have been obtained: threshold voltages of 0.1 and -0.5 V, transconductances of 500 and 390 mS/mm, source resistances of 0.7 and 0.6 Ω-mm, and transit frequencies of 35 and 30 GHz. This process includes photodiodes. A deep wet etch was used to deposit the photodiodes on an undoped GaAs buffer layer.
Appears in Collections:15 Fakultätsübergreifend / Sonstige Einrichtung

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