1.3 &#956;m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Hurm, Volker; Benz, Willi; Berroth, Manfred; Fink, Thomas; Fritzsche, Daniel; Haupt, Michael; Hofmann, Peter; Köhler, Klaus; Ludwig, Manfred; Mause, Klaus; Raynor, Brian; Rosenzweig, Josef

1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

dc.contributor.author	Hurm, Volker	de
dc.contributor.author	Benz, Willi	de
dc.contributor.author	Berroth, Manfred	de
dc.contributor.author	Fink, Thomas	de
dc.contributor.author	Fritzsche, Daniel	de
dc.contributor.author	Haupt, Michael	de
dc.contributor.author	Hofmann, Peter	de
dc.contributor.author	Köhler, Klaus	de
dc.contributor.author	Ludwig, Manfred	de
dc.contributor.author	Mause, Klaus	de
dc.contributor.author	Raynor, Brian	de
dc.contributor.author	Rosenzweig, Josef	de
dc.date.accessioned	2014-05-12	de
dc.date.accessioned	2016-03-31T11:45:28Z
dc.date.available	2014-05-12	de
dc.date.available	2016-03-31T11:45:28Z
dc.date.issued	1994	de
dc.description.abstract	The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 kΩ. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.	en
dc.identifier.other	416156223	de
dc.identifier.uri	http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92477	de
dc.identifier.uri	http://elib.uni-stuttgart.de/handle/11682/8212
dc.identifier.uri	http://dx.doi.org/10.18419/opus-8195
dc.language.iso	en	de
dc.rights	info:eu-repo/semantics/openAccess	de
dc.subject.classification	Photodiode , Optoelektronische Schaltung , HEMT , Galliumarsenid-Feldeffekttransistor	de
dc.subject.ddc	621.3	de
dc.title	1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs	en
dc.type	conferenceObject	de
ubs.fakultaet	Fakultätsübergreifend / Sonstige Einrichtung	de
ubs.institut	Sonstige Einrichtung	de
ubs.opusid	9247	de
ubs.publikation.source	Technical digest / International Electron Devices Meeting 1994. Piscataway, NJ : IEEE, 1994. - ISBN 0-7803-2111-1, S. 935-937	de
ubs.publikation.typ	Konferenzbeitrag	de