15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors

dc.contributor.authorWang, Zhigongde
dc.contributor.authorBerroth, Manfredde
dc.contributor.authorNowotny, Ulrichde
dc.contributor.authorGotzeina, Wernerde
dc.contributor.authorHofmann, Peterde
dc.contributor.authorHülsmann, Axelde
dc.contributor.authorKaufel, Gudrunde
dc.contributor.authorKöhler, Klausde
dc.contributor.authorRaynor, Briande
dc.contributor.authorSchneider, Joachimde
dc.date.accessioned2014-05-12de
dc.date.accessioned2016-03-31T11:45:30Z
dc.date.available2014-05-12de
dc.date.available2016-03-31T11:45:30Z
dc.date.issued1992de
dc.description.abstractAn integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.en
dc.identifier.other406380724de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92708de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/8225
dc.identifier.urihttp://dx.doi.org/10.18419/opus-8208
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationLaserdiode , Galliumarsenid-Feldeffekttransistorde
dc.subject.ddc621.3de
dc.title15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistorsen
dc.typearticlede
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.institutSonstige Einrichtungde
ubs.opusid9270de
ubs.publikation.sourceElectronics letters 28 (1992), S. 222-224. URL http://dx.doi.org./ 10.1049/el:19920138de
ubs.publikation.typZeitschriftenartikelde

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