AC conductivity of deformed germanium single crystals at T = 4.2 K

Abstract

Dislocations introduced in semiconductor single crystals generate deep electronic states in the gap which form one-dimensional energy bands along the dislocation lines. Because dangling bonds can be charged by trapping electrons or holes, quasi-metallic conduction along the dislocations is expected. Plastic deformation produces a network of dislocations with only small unconnected segments of ideal behaviour. Therefore the conductivity of the dislocation core can only be obtained by special dc measurements or from high frequency conductivity.