One-phonon ionization of neutral donors in germanium

dc.contributor.authorGienger, Martinde
dc.contributor.authorGroß, Peterde
dc.contributor.authorLassmann, Kurtde
dc.date.accessioned2009-10-12de
dc.date.accessioned2016-03-31T08:35:52Z
dc.date.available2009-10-12de
dc.date.available2016-03-31T08:35:52Z
dc.date.issued1989de
dc.description.abstractHere we show by phonon spectroscopy with superconducting tunnelling junctions that one-phonon excitations from the ground state to the conduction band (CB) are measurable as phonon induced conductivity (PIC) changes in the special case of donors in Ge. For the conductivity thresholds we find somewhat smaller binding energies than evaluated from optical measurements whereas for the 1s-singlet to 1s-triplet ground state splitting as seen by elastic phonon scattering we obtain the optical values.en
dc.identifier.other317975889de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47182de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/4911
dc.identifier.urihttp://dx.doi.org/10.18419/opus-4894
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationPhononenspektroskopie , Phononeninduzierte elektrische Leitfähigkeit , Donator <Halbleiterphysik>de
dc.subject.ddc530de
dc.titleOne-phonon ionization of neutral donors in germaniumen
dc.typeconferenceObjectde
ubs.fakultaetFakultät Mathematik und Physikde
ubs.institut1. Physikalisches Institutde
ubs.opusid4718de
ubs.publikation.sourceMonemar, Bo (Hrsg.): Shallow impurities in semiconductors 1988 : proceedings of the Third International Conference held in Linköping, Sweden, 10 - 12 August 1988. Bristol : Institute of Physics, 1989 (Conference series / Institute of Physics, 95), S. 173-178de
ubs.publikation.typKonferenzbeitragde

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