Strong mode coupling in InP quantum dot-based GaInP microdisk cavity dimers

dc.contributor.authorWitzany, Marcus
dc.contributor.authorLiu, T.-L.
dc.contributor.authorShim, J.-B.
dc.contributor.authorHargart, Fabian
dc.contributor.authorKoroknay, Elisabeth
dc.contributor.authorSchulz, Wolfgang-Michael
dc.contributor.authorJetter, Michael
dc.contributor.authorHu, E.
dc.contributor.authorWiersig, Jan
dc.contributor.authorMichler, Peter
dc.date.accessioned2025-07-29T09:40:33Z
dc.date.issued2013
dc.date.updated2023-11-14T03:00:41Z
dc.description.abstractWe report on strong mode coupling in closely spaced GaInP microdisk dimer structures including InP quantum dots as the active medium. Using electron beam lithography and a combination of dry- and wet-etch processes, dimers with inter-disk separations down to d < 100 nm have been fabricated. Applying a photo-thermal heating scheme, we overcome the spectral mode detuning due to the size mismatch between the two disks forming the dimer. We observe signatures of mode coupling in the corresponding photoluminescence spectra with coupling energies of up to 0.66 MeV. With the aid of a numerical analysis, we specify the geometrical and physical factors of the microdisk dimer precisely, and reproduce its spectrum with good agreement.en
dc.description.sponsorshipDFG
dc.identifier.issn1367-2630
dc.identifier.other1932853278
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-169360de
dc.identifier.urihttps://elib.uni-stuttgart.de/handle/11682/16936
dc.identifier.urihttps://doi.org/10.18419/opus-16917
dc.language.isoen
dc.relation.uridoi:10.1088/1367-2630/15/1/013060
dc.rightsCC-BY-NC-SA
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/4.0/
dc.subject.ddc530
dc.titleStrong mode coupling in InP quantum dot-based GaInP microdisk cavity dimersen
dc.typearticle
ubs.fakultaetMathematik und Physik
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtung
ubs.institutInstitut für Halbleiteroptik und Funktionelle Grenzflächen
ubs.institutFakultätsübergreifend / Sonstige Einrichtung
ubs.publikation.seiten11
ubs.publikation.sourceNew journal of physics 15 (2013), No. 013060
ubs.publikation.typZeitschriftenartikel

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