Raman characterization of dioxygen species as defects in single-crystal ZnO including their pressure dependence

Abstract

The defects in zinc oxide crystals are of crucial importance for their usability in many applications and are not yet fully understood. Here, we demonstrate that dioxygen species are present as defects in the grown ZnO, resulting in a bending of the atom layers that lie perpendicular to the c-axis. In the Raman spectra, these defects cause the appearance of bands different from the known bands of perfect ZnO crystals allowed by symmetry. These additional Raman bands, which have been frequently reported for ZnO in the past, can thus be fully explained by the presence of dioxygen species, and the widespread assumption of second-order modes for the assignments of these bands is not necessary. Furthermore, the Raman spectrum belonging to perfect zinc oxide in the ideal wurtzite structure is presented, obtained from small domains in ZnO(0001) crystals exposed to pressures up to 2 GPa. The dependence of the O-O stretching modes on the applied pressure proves the presence of dioxygen species in ZnO, which is also confirmed by phonon calculations of structure models with embedded dioxygen species. The surface quality of the ZnO crystals studied is also reflected in the Raman spectra and is included in the analysis.