14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver

dc.contributor.authorHurm, Volkerde
dc.contributor.authorLudwig, Manfredde
dc.contributor.authorRosenzweig, Josefde
dc.contributor.authorBenz, Willide
dc.contributor.authorBerroth, Manfredde
dc.contributor.authorBosch, Rolandde
dc.contributor.authorBronner, Wolfgangde
dc.contributor.authorHülsmann, Axelde
dc.contributor.authorKöhler, Klausde
dc.contributor.authorRaynor, Briande
dc.contributor.authorSchneider, Joachimde
dc.date.accessioned2014-04-30de
dc.date.accessioned2016-03-31T11:45:27Z
dc.date.available2014-04-30de
dc.date.available2016-03-31T11:45:27Z
dc.date.issued1993de
dc.description.abstractA monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifer has been fabricated using an enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs HEMT process. The band-width of 14.3 GHz implies suitability for transmission rates of up 20 Gbit/s. The transimpendance is 670 Ω (into 50 Ω) and the projected sensitivity is 16.4 dBm (BER = 10 -9).en
dc.identifier.other40605715Xde
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92361de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/8203
dc.identifier.urihttp://dx.doi.org/10.18419/opus-8186
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationHEMT , Photodiode , Optoelektronische Schaltungde
dc.subject.ddc621.3de
dc.title14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiveren
dc.typearticlede
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.institutSonstige Einrichtungde
ubs.opusid9236de
ubs.publikation.sourceElectronics letters 29 (1993), S. 9-10. URL http://dx.doi.org./ 10.1049/el:19930006de
ubs.publikation.typZeitschriftenartikelde

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