Wolfstädter, BerndTrebin, Hans-RainerPascher, HaraldHäfele, Hans-Georg2016-01-182016-03-312016-01-182016-03-311988456207546http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-104793http://elib.uni-stuttgart.de/handle/11682/8451http://dx.doi.org/10.18419/opus-8434In a series of four papers magnetooptical transitions are presented for InSb crystals, which are subjected to uniaxial stress perpendicular to the magnetic field. Here, in the first paper, we establish an 8×8 k⋅p Hamiltonian matrix for stress Tǁ[100] and field Bǁ[001] and diagonalize it exactly. The dependence of valence and conduction states on stress and longitudinal momentum is discussed and compared with the geometry of parallel fields TǁBǁ[001]. Characteristic features are extracted for inter- and intraband transitions. Under crossed fields, the levels are separated much stronger with stress, yielding more insight than in the parallel configuration.eninfo:eu-repo/semantics/openAccessHalbleiter , Stimulierter Raman-Effekt , Valenzband530article