Wang, ZhigongBerroth, ManfredNowotny, UlrichGotzeina, WernerHofmann, PeterHülsmann, AxelKaufel, GudrunKöhler, KlausRaynor, BrianSchneider, Joachim2014-05-122016-03-312014-05-122016-03-311992406380724http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92708http://elib.uni-stuttgart.de/handle/11682/8225http://dx.doi.org/10.18419/opus-8208An integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.eninfo:eu-repo/semantics/openAccessLaserdiode , Galliumarsenid-Feldeffekttransistor621.3article