Burger, WilfriedLassmann, KurtHolm, ClausWagner, Peter2009-10-132016-03-312009-10-132016-03-311986318047837http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47143http://elib.uni-stuttgart.de/handle/11682/7073http://dx.doi.org/10.18419/opus-7056At low temperatures shallow neutral donors and acceptors in silicon can bind an extra carrier to form the so-called D- and A+ centers. With the method of phonon-induced electrical conductivity (PIC) we find the same threshold energies for the detachment of these carriers associated with the shallow impurities P and B, as have been obtained previously by FIR measurements. This shows that the detachment is by a one-phonon process. We find that there is no central cell correction for the binding to the deeper acceptors Al and Ga, whereas for In+ the binding energy is as large as 5,8 meV. We interprete this dependence on acceptor species as another example of the shallow-deep instability of the binding energy with the variation of the central cell potential.eninfo:eu-repo/semantics/openAccessSilicium , Phononeninduzierte elektrische Leitfähigkeit530conferenceObject2010-10-07