Hurm, VolkerRosenzweig, JosefLudwig, ManfredBenz, WilliOsorio, RicardoBerroth, ManfredHülsmann, AxelKaufel, GudrunKöhler, KlausRaynor, BrianSchneider, Joachim2014-05-122016-03-312014-05-122016-03-311991406381046http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92722http://elib.uni-stuttgart.de/handle/11682/8227http://dx.doi.org/10.18419/opus-8210A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was fabricated using a 0.5-μm recessed-gate process for double delta-doped quantum-well HEMTs. The following mean values for the enhancement and depletion HEMT parameters, respectively, have been obtained: threshold voltages of 0.1 and -0.5 V, transconductances of 500 and 390 mS/mm, source resistances of 0.7 and 0.6 Ω-mm, and transit frequencies of 35 and 30 GHz. This process includes photodiodes. A deep wet etch was used to deposit the photodiodes on an undoped GaAs buffer layer.eninfo:eu-repo/semantics/openAccessPhotodiode , Galliumarsenid , Aluminiumarsenid , Mischkristall , HEMT621.310 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiverarticle