Nitzsche, MaximilianZehelein, MatthiasTröster, NathanRoth-Stielow, Jörg2020-02-192020-02-192018978-3-8007-4646-0http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-107625http://elib.uni-stuttgart.de/handle/11682/10762http://dx.doi.org/10.18419/opus-10745In this paper different approaches in precise measurement of gate voltages as well as drain-source voltages of modern SiC and GaN transistors are compared. An approach to calculate the necessary bandwidth of a voltage probe to reproduce the voltage slope is presented. Furthermore, state-of-the-art voltage probes are compared in means of bandwidth, common mode reduction and response on EMI.eninfo:eu-repo/semantics/openAccess621.3conferenceObject