Thiede, AndreasTasker, PaulHülsmann, AxelKöhler, KlausBronner, WolfgangSchlechtweg, MichaelBerroth, ManfredBraunstein, JürgenNowotny, Ulrich2014-05-122016-03-312014-05-122016-03-31199340637841Xhttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92548http://elib.uni-stuttgart.de/handle/11682/8215http://dx.doi.org/10.18419/opus-8198The design and performance of a 28-51 GHz dynamic frequency divider based on pseudomorphic Al0.2Ga0.8As/In0.25Ga0.75As MODFETs with 0.15 μm mushroom-shaped gates are presented. The circuit has a power consumption of approximately 440 mW and a chip area of approximately 200x220 μm2.eninfo:eu-repo/semantics/openAccessGalliumarsenid-Feldeffekttransistor , Frequenzteiler , HEMT621.3article