Berroth, ManfredHurm, VolkerLang, ManfredLudwig, ManfredNowotny, UlrichWang, ZhigongWennekers, PeterHülsmann, AxelKaufel, GudrunKöhler, KlausRaynor, BrianSchneider, Joachim2014-04-302016-03-312014-04-302016-03-311992411096265http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92333http://elib.uni-stuttgart.de/handle/11682/8208http://dx.doi.org/10.18419/opus-8191A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3- μm gates. A 4 bit multiplexer and a laser diode driver for the transmitter as well as a transimpedance amplifier, bit synchronizer, and 4 bit demultiplexer for the receiver have been successfully operated with data rates up to 20 Gbit/s.eninfo:eu-repo/semantics/openAccessGalliumarsenid , Aluminiumarsenid , Mischkristall , HEMT , Integrierte Schaltung , Hochgeschwindigkeitsnetz621.3conferenceObject