Köpf, AndreasLassmann, Kurt2009-10-122016-03-312009-10-122016-03-31199231804045Xhttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47200http://elib.uni-stuttgart.de/handle/11682/4922http://dx.doi.org/10.18419/opus-4905It is shown by dielectric resonance absorption at 60 GHz that there is a linear coupling of the electric field to the ground state of effective mass acceptors in Si reflecting the lower Td symmetry in the central portion of the ground-state wave function. The coupling increases strongly with increasing binding energy from B to In, i.e., with decreasing Bohr radius of the acceptor. An unexpected nonlinear Zeeman splitting is observed the magnitude of which also increases from B to In. For all acceptors a central fine structure is found which correlates with the homogeneous linewidth.eninfo:eu-repo/semantics/openAccessAkzeptor <Halbleiterphysik> , Elektrisches Feld , Silicium530article