Lassmann, KurtSchad, Hanspeter2009-10-072016-03-312009-10-072016-03-311976317906933http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-46790http://elib.uni-stuttgart.de/handle/11682/6732http://dx.doi.org/10.18419/opus-6715We report on measurements of the ultrasonic attenuation in GaAs: Mn at frequencies between 400 and 2000 MHz and at temperatures between 1 and 35 K. The results indicate that there is a level 3 meV above the acceptor round state.eninfo:eu-repo/semantics/openAccessUltraschallspektroskopie , Akzeptor <Halbleiterphysik>530article2015-07-17