Köpf, AndreasAmbrosy, AntonLassmann, Kurt2009-10-122016-03-312009-10-122016-03-311989317972391http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47176http://elib.uni-stuttgart.de/handle/11682/4910http://dx.doi.org/10.18419/opus-4893It is shown by dielectric resonance absorption at 24 GHz and by ultrasonic resonance spectroscopy between 5 and 10 GHz that linear coupling of the electric field to the ground state of effective mass acceptors in Si exists and has a distinct chemical shift from B to In.eninfo:eu-repo/semantics/openAccessAkzeptor <Halbleiterphysik> , Elektrisches Feld530conferenceObject2010-09-28