Seidel, LukasLiu, TerenConcepción, OmarMarzban, BaharehKiyek, VivienSpirito, DavideSchwarz, DanielBenkhelifa, AimenSchulze, JörgIkonic, ZoranHartmann, Jean-MichelChelnokov, AlexeiWitzens, JeremyCapellini, GiovanniOehme, MichaelGrützmacher, DetlevBuca, Dan2025-06-2020242041-1723http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-166480https://elib.uni-stuttgart.de/handle/11682/16648https://doi.org/10.18419/opus-16629Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.enCC BYinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/4.0/621.3article2025-01-27