Lassmann, KurtGienger, MartinGlaser, Markus2009-10-122016-03-312009-10-122016-03-311993317977016http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47226http://elib.uni-stuttgart.de/handle/11682/4913http://dx.doi.org/10.18419/opus-4896We can summarize our results as follows: Whereas the band of lowest lying mechanical states of interstitial oxygen in Si can be approximated by a two-dimensional oscillator perturbed by a central potential, the corresponding states in Ge can be well understood by a bindered rotator with a large central potential opposing a bending oscillation and with a sixfold modulation of the rotation due to the influence of the 6 neighbours to the Ge-O-Ge moleculeeninfo:eu-repo/semantics/openAccessPhononenspektroskopie , Silicium , Germanium530conferenceObject2014-10-27