18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs

Wang, ZhigongNowotny, UlrichBerroth, ManfredBronner, WolfgangHofmann, PeterHülsmann, AxelKöhler, KlausRaynor, BrianSchneider, Joachim2014-04-302016-03-312014-04-302016-03-311992406058342http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92371http://elib.uni-stuttgart.de/handle/11682/8204http://dx.doi.org/10.18419/opus-8187A monolithically integrated 2:1 multiplexer and laser diode driver was developed, using AlGaAs quantum well HEMTs of 0.3 μm gate length. The DC and modulation current is 25 and 45 mA, respectively. Open eye diagrams were measured at bit rates up to 18 Gbit/s with pseudorandom data streams.eninfo:eu-repo/semantics/openAccessHalbleiterlaser , HEMT , Multiplexer621.318 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTsarticle2014-04-30