Berroth, ManfredBosch, Roland2014-05-212016-03-312014-05-212016-03-311990408359374http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92685http://elib.uni-stuttgart.de/handle/11682/8248http://dx.doi.org/10.18419/opus-8231For the design of digital circuits as well as for power amplifiers, the nonlinear modelling of GaAs FETs is a necessity. We use an extended equivalent circuit, which takes into account the gate current of positive biased transistors as well as the symmetrical nature of the devices at low drain voltages. A fast method to determine the elements of the equivalent circuit from measured S-parameters is presented which delivers for the first time good agreement for all operating points. A valid large signal description of the device can be obtained by implementing the bias dependences of the intrinsic elements into a circuit simulator like SPICE.eninfo:eu-repo/semantics/openAccessGalliumarsenid-Feldeffekttransistor , Hochfrequenzschaltung , MMIC621.3conferenceObject